US8054035B2ActiveUtilityA1

Power storage device including an antenna

85
Assignee: SEMICONDUCTOR ENERGY LABPriority: Jul 28, 2006Filed: Nov 12, 2010Granted: Nov 8, 2011
Est. expiryJul 28, 2026(~0 yrs left)· nominal 20-yr term from priority
Inventors:Shunpei YamazakiYasuyuki Arai
H01Q 1/36H02J 50/005H01Q 1/38H02J 50/10H01Q 7/00H02J 50/27H01Q 9/285H10D 84/811H02J 50/12H02J 50/50
85
PatentIndex Score
5
Cited by
64
References
40
Claims

Abstract

In the field of portable electronic devices in the future, portable electronic devices will be desired, which are smaller and more lightweight and can be used for a long time period by one-time charging, as apparent from provision of one-segment partial reception service “1-seg” of terrestrial digital broadcasting that covers the mobile objects such as a cellular phone. Therefore, the need for a power storage device is increased, which is small and lightweight and capable of being charged without receiving power from commercial power. The power storage device includes an antenna for receiving an electromagnetic wave, a capacitor for storing power, and a circuit for controlling store and supply of the power. When the antenna, the capacitor, and the control circuit are integrally formed and thinned, a structural body formed of ceramics or the like is partially used. A circuit for storing power of an electromagnetic wave received at the antenna in a capacitor and a control circuit for arbitrarily discharging the stored power are provided, whereby lifetime of the power storage device can be extended.

Claims

exact text as granted — not AI-modified
1. A power storage device comprising:
 a first structural body including an antenna; 
 a power supply control circuit comprising a semiconductor layer over a substrate having an insulating surface; and 
 a second structural body comprising a capacitor and a through electrode, the through electrode formed through the second structural body, 
 wherein the antenna and the power supply control circuit are connected with the through electrode. 
 
     
     
       2. The power storage device according to  claim 1 , wherein the semiconductor layer is polycrystalline silicon. 
     
     
       3. The power storage device according to  claim 1 , wherein the semiconductor layer is a single crystalline silicon. 
     
     
       4. The power storage device according to  claim 1 , wherein the capacitor comprises a dielectric layer and a capacitor electrode. 
     
     
       5. The power storage device according to  claim 4 , wherein the dielectric layer comprises a ceramic material. 
     
     
       6. The power storage device according to  claim 4 , wherein the capacitor is formed by stacking the dielectric layer and the capacitor electrode. 
     
     
       7. The power storage device according to  claim 1 , wherein the power supply control circuit comprises a plurality of transistors. 
     
     
       8. A power storage device comprising:
 a first structural body including an antenna; 
 a power supply control circuit comprising a semiconductor layer over a substrate having an insulating surface, under the first structural body; and 
 a second structural body comprising a capacitor and a capacitor external electrode, 
 wherein the power supply control circuit is electrically connected with the capacitor external electrode. 
 
     
     
       9. The power storage device according to  claim 8 , wherein the semiconductor layer is polycrystalline silicon. 
     
     
       10. The power storage device according to  claim 8 , wherein the semiconductor layer is a single crystalline silicon. 
     
     
       11. The power storage device according to  claim 8 , wherein the capacitor comprises a dielectric layer and a capacitor electrode. 
     
     
       12. The power storage device according to  claim 11 , wherein the dielectric layer comprises a ceramic material. 
     
     
       13. The power storage device according to  claim 11 , wherein the capacitor is formed by stacking the dielectric layer and the capacitor electrode. 
     
     
       14. The power storage device according to  claim 8 , wherein the power supply control circuit comprises a plurality of transistors. 
     
     
       15. A power storage device comprising:
 a first structural body including an antenna; 
 a second structural body comprising a capacitor; and 
 a power supply control circuit comprising a semiconductor layer over a substrate having an insulating surface, a first connection electrode for electrically connecting with the antenna and a second connection electrode for electrically connecting with the capacitor, the power supply control circuit interposed between the first structural body and the second structural body. 
 
     
     
       16. The power storage device according to  claim 15 , wherein the semiconductor layer is polycrystalline silicon. 
     
     
       17. The power storage device according to  claim 15 , wherein the semiconductor layer is a single crystalline silicon. 
     
     
       18. The power storage device according to  claim 15 , wherein the capacitor comprises a dielectric layer and a capacitor electrode. 
     
     
       19. The power storage device according to  claim 18 , wherein the dielectric layer comprises a ceramic material. 
     
     
       20. The power storage device according to  claim 18 , wherein the capacitor is formed by stacking the dielectric layer and the capacitor electrode. 
     
     
       21. The power storage device according to  claim 15 , wherein the power supply control circuit comprises a plurality of transistors. 
     
     
       22. A power storage device comprising:
 a first structural body including an antenna; 
 a second structural body comprising a capacitor and a capacitor external electrode; and 
 a power supply control circuit comprising a semiconductor layer over a substrate having an insulating surface, and a connection electrode for electrically connecting with the capacitor through the capacitor external electrode. 
 
     
     
       23. The power storage device according to  claim 22 , wherein the semiconductor layer is polycrystalline silicon. 
     
     
       24. The power storage device according to  claim 22 , wherein the semiconductor layer is a single crystalline silicon. 
     
     
       25. The power storage device according to  claim 22 , wherein the capacitor comprises a dielectric layer and a capacitor electrode. 
     
     
       26. The power storage device according to  claim 25 , wherein the dielectric layer comprises a ceramic material. 
     
     
       27. The power storage device according to  claim 25 , wherein the capacitor is formed by stacking the dielectric layer and the capacitor electrode. 
     
     
       28. The power storage device according to  claim 22 , wherein the power supply control circuit comprises a plurality of transistors. 
     
     
       29. The power storage device according to  claim 1 , wherein the second structural body has higher rigidity than the first structural body. 
     
     
       30. The power storage device according to  claim 8 , wherein the second structural body has higher rigidity than the first structural body. 
     
     
       31. The power storage device according to  claim 15 , wherein the second structural body has higher rigidity than the first structural body. 
     
     
       32. The power storage device according to  claim 22 , wherein the second structural body has higher rigidity than the first structural body. 
     
     
       33. A power storage device comprising:
 a first structural body including an antenna; 
 a power supply control circuit comprising a semiconductor layer, and a connection electrode; and 
 a second structural body comprising a capacitor electrically connected to the power supply control circuit, 
 wherein the connection electrode is connected to the antenna. 
 
     
     
       34. The power storage device according to  claim 33 , wherein the semiconductor layer is polycrystalline silicon over a substrate having an insulating surface. 
     
     
       35. The power storage device according to  claim 33 , wherein the semiconductor layer is a single crystalline silicon. 
     
     
       36. The power storage device according to  claim 33 , wherein the capacitor comprises a dielectric layer and a capacitor electrode. 
     
     
       37. The power storage device according to  claim 36 , wherein the dielectric layer comprises a ceramic material. 
     
     
       38. The power storage device according to  claim 36 , wherein the capacitor is formed by stacking the dielectric layer and the capacitor electrode. 
     
     
       39. The power storage device according to  claim 33 , wherein the power supply control circuit comprises a plurality of transistors. 
     
     
       40. The power storage device according to  claim 33 , wherein the second structural body has higher rigidity than the first structural body.

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