Switching device with solid electrolyte layer

Abstract

A switching device with a solid electrolyte layer includes: a substrate; a lower electrode formed over the substrate; a solid electrolyte layer disposed over the lower electrode; and an upper electrode formed over the solid electrolyte layer.

1. A switching device with a solid electrolyte layer, comprising:
 a substrate; 
 a lower electrode formed over the substrate; 
 a solid electrolyte layer disposed over the lower electrode; and 
 an upper electrode formed over the solid electrolyte layer, 
 wherein the solid electrolyte layer is formed of Gd x S y , where Gd denotes gadolinium, S denotes sulfide, and x and y denote positive numbers. 
 
     
     
       2. The switching device of  claim 1 , wherein the upper electrode includes diffusive metal. 
     
     
       3. The switching device of  claim 2 , wherein the diffusive metal is any one selected from the group consisting of copper (Cu), silver (Ag), and zinc (Zn). 
     
     
       4. The switching device of  claim 2 , wherein the solid electrolyte layer is doped with a metal which is the same as the diffusive metal. 
     
     
       5. The switching device of  claim 1 , wherein the switching device is switched between an on state and an off state, as a conductive path is created in or removed from the solid electrolyte layer according to voltages applied to the lower electrode and the upper electrode. 
     
     
       6. The switching device of  claim 1 , wherein the switching device forms a memory cell. 
     
     
       7. A switching device, comprising:
 a substrate; 
 a lower electrode formed over the substrate; 
 a first solid electrolyte layer disposed over the lower electrode; 
 a second solid electrolyte layer disposed over the first solid electrolyte layer; and 
 an upper electrode formed over the second solid electrolyte layer. 
 
     
     
       8. The switching device of  claim 7 , wherein the second solid electrolyte layer is formed thicker than the first solid electrolyte layer. 
     
     
       9. The switching device of  claim 7 , wherein the first solid electrolyte layer has a thickness equal to or less than approximately 10 nm. 
     
     
       10. The switching device of  claim 7 , wherein the first solid electrolyte layer is formed of Gd x O y , where Gd denotes gadolinium, O denotes oxygen; and x and y denote positive numbers. 
     
     
       11. The switching device of  claim 7 , wherein the second solid electrolyte layer is formed of Gd a S b , where Gd denotes gadolinium, S denotes sulfide, and a and b denote positive numbers. 
     
     
       12. The switching device of  claim 7 , wherein the upper electrode includes diffusive metal. 
     
     
       13. The switching device of  claim 12 , wherein the diffusive metal is any one selected from the group consisting of copper (Cu), silver (Ag), and zinc (Zn). 
     
     
       14. The switching device of  claim 12 , wherein the second solid electrolyte layer is doped with a metal that is the same as the diffusive metal. 
     
     
       15. The switching device of  claim 7 , wherein the switching device is switched between an on state and an off state, as a conductive path is created in or removed from the first solid electrolyte layer and the second solid electrolyte layer according to voltages applied to the lower electrode and the upper electrode. 
     
     
       16. The switching device of  claim 7 , wherein the switching device forms a memory cell.