Method of manufacturing a liquid crystal device utilizing a liquid organic semiconductor for the active layer

Abstract

An LCD device and a method for fabricating the same is disclosed that improves a yield by decreasing processing time. The LCD device includes gate and data lines formed substantially perpendicular to each other on a substrate and defining a unit pixel region; a thin film transistor formed at a crossing of the gate and data lines; an active layer formed over the gate line, the data line, and the thin film transistor; an organic resin formed on a portion of a gate insulating layer not including the gate line, the data line, and the thin film transistor; a passivation layer formed on an entire surface of the substrate including the thin film transistor; and a pixel electrode, formed in the unit pixel region, the pixel electrode being connected with a drain electrode of the thin film transistor.

1. A method for fabricating an LCD device comprising:
 forming a gate line including a gate electrode on a substrate; 
 forming a gate insulating layer on the substrate including the gate line; 
 forming a data line substantially perpendicular to the gate line and defining a unit pixel region, wherein source and drain electrodes respectively overlap both sides of the gate electrode; 
 forming an insulating organic resin on a portion of the gate insulating layer not including the gate electrode, the gate line, the data line, the source electrode, and the drain electrode, by exposure of the rear surface of the substrate, not using a mask, after forming the data line and the source and drain electrodes; 
 forming an active layer on entire surfaces of the gate electrode, the gate line, the data line, the source electrode, and the drain electrode, except the organic resin; 
 forming a passivation layer on an entire surface of the substrate including the data line; and 
 forming a pixel electrode in the pixel region, wherein the pixel electrode contacts the drain electrode. 
 
     
     
       2. The method of  claim 1 , wherein the step of forming an insulating organic resin comprises,
 coating the insulating organic resin, which is hardened by UV irradiation, on the entire surface of the substrate; 
 applying UV rays to a rear surface of the substrate by using the gate electrode, the gate line, the data line, the source electrode, and the drain electrode as a mask; and 
 removing the insulating organic resin not hardened by the UV irradiation. 
 
     
     
       3. The method of  claim 1 , wherein the insulating organic resin is formed of acryl base or epoxy base. 
     
     
       4. The method of  claim 1 , wherein the step of forming an active layer comprises:
 coating a liquid material, which is a solvent having a semiconductor material dispersedly floating, on the entire surface of the substrate; and 
 performing a heat treatment to the coated liquid material to vaporize the solvent. 
 
     
     
       5. The method of  claim 4 , wherein the liquid material includes an organic semiconductor material including pentacene. 
     
     
       6. The method of  claim 1 , wherein the passivation layer is formed of at least one of oxide, nitride, photo acryl, polyimide, and BenzoCycloButene (BCB). 
     
     
       7. The method of  claim 1 , further comprising forming a first storage electrode in a predetermined portion above a preceding gate line, wherein the first storage electrode is formed with when forming the data line, the source electrode, and the drain electrode. 
     
     
       8. The method of  claim 7 , further comprising forming first and second contact holes for respectively exposing predetermined portions of the drain electrode and the first storage electrode by patterning the passivation layer. 
     
     
       9. The method of  claim 8 , wherein the active layer and the passivation layer positioned over the gate line adjacent to the data line are removed when forming the first and second contact holes. 
     
     
       10. The method of  claim 8 , further comprising forming a second storage electrode extending from the pixel electrode to the preceding gate line, wherein the second storage electrode is connected with the first storage electrode through the second contact hole, when forming the pixel electrode.