Exposure system and pattern formation method using the same

Abstract

An exposure system includes a liquid supply section for supplying an immersion liquid onto a resist film formed on a substrate; and an exposure section for irradiating the resist film with exposing light through a mask with the immersion liquid provided on the resist film. The liquid supply section includes an immersion liquid tank for circulating the immersion liquid during exposure.

1. A pattern formation method comprising the steps of:
 forming a resist film on a substrate; 
 performing pattern exposure by selectively irradiating said resist film with exposing light through an immersion liquid with an immersion liquid provided on only a region of resist film that is being irradiated; and 
 developing said resist film after the pattern exposure, 
 wherein said immersion liquid is stirred during the pattern exposure and circulated during the pattern exposure in the step of performing pattern exposure, and 
 said immersion liquid is allowed to flow during the pattern exposure in the step of performing pattern exposure. 
 
     
     
       2. A pattern formation method comprising the steps of:
 forming a resist film on a substrate; 
 performing pattern exposure by selectively irradiating said resist film with exposing light with an immersion liquid provided on said resist film; and 
 developing said resist film after the pattern exposure, 
 wherein said immersion liquid is stirred during the pattern exposure in the step of performing pattern exposure, and 
 said immersion liquid is allowed to flow during the pattern exposure in the step of performing pattern exposure. 
 
     
     
       3. The pattern formation method of  claim 2 ,
 wherein said immersion liquid is discharged during the pattern exposure in the step of performing pattern exposure. 
 
     
     
       4. The pattern formation method of  claim 3 ,
 wherein a fresh immersion liquid is supplied onto said resist film during the pattern exposure in the step of performing pattern exposure. 
 
     
     
       5. The pattern formation method of  claim 2 ,
 wherein said immersion liquid is water or perfluoropolyether. 
 
     
     
       6. The pattern formation method of  claim 2 ,
 wherein said exposing light is KrF excimer laser, ArF excimer laser, F 2  laser, Kr 2  laser, ArKr laser or Ar 2  laser.