Imaging apparatus and radiation imaging system

Abstract

An imaging apparatus includes a plurality of pixels disposed on an insulation substrate. Each of the pixels includes a plurality of thin-film transistors, a conversion element disposed above the TFTs, and a plurality of insulating layers disposed between the conversion element and the plurality of TFTs. The plurality of TFTs includes a reading TFT having a gate electrode electrically connected to the conversion element and a first selecting TFT electrically connected to a source electrode or a drain electrode of the reading TFT. At least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers.

1. An imaging apparatus comprising:
 an insulation substrate; and 
 a plurality of pixels disposed on the insulation substrate, wherein each of the plurality of pixels includes a plurality of thin-film transistors, a conversion element disposed above the plurality of thin-film transistors, and a plurality of insulating layers disposed between the conversion element and the plurality of thin-film transistors, 
 wherein the plurality of thin-film transistors comprises a reading thin-film transistor having a gate electrode electrically connected to the conversion element and a first selecting thin-film transistor electrically connected to a source electrode or a drain electrode of the reading thin-film transistor, and 
 wherein at least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers, 
 wherein each of the pixels further includes a second selecting thin-film transistor electrically connected to the gate wiring, and 
 wherein each of the source electrode and the drain electrode of the reading thin-film transistor is electrically connected to either one of the first selecting thin-film transistor and the second selecting thin-film transistor. 
 
   
   
     2. The imaging apparatus according to  claim 1 , wherein each of the plurality of insulating layers has a thickness larger than a thickness of a gate insulating layer of each of the plurality of thin-film transistors. 
   
   
     3. The imaging apparatus according to  claim 1 , wherein the thickness of each of the plurality of insulating layers is between 1 μm and 10 μm, inclusive. 
   
   
     4. The imaging apparatus according to  claim 1 , wherein each of the pixels further includes a resetting thin-film transistor connected to the conversion element and configured to supply a reset potential. 
   
   
     5. The imaging apparatus according to  claim 1 , wherein each of the pixels further includes a transferring thin-film transistor electrically connected between the conversion element and the signal wiring and configured to transfer electric charge obtained by conversion performed by the conversion element. 
   
   
     6. A radiation imaging system comprising:
 an imaging apparatus comprised of an insulation substrate, and a plurality of pixels disposed on the insulation substrate, wherein each of the plurality of pixels includes a plurality of thin-film transistors, a conversion element disposed above the plurality of thin-film transistors, and a plurality of insulating layers disposed between the conversion element and the plurality of thin-film transistors, 
 wherein the plurality of thin-film transistors comprises a reading thin-film transistor having a gate electrode electrically connected to the conversion element and a first selecting thin-film transistor electrically connected to a source electrode or a drain electrode of the reading thin-film transistor, and 
 wherein at least one of a signal wiring, to which a signal corresponding to an electric charge obtained by conversion of incident light or radiation performed by the conversion element is transferred, and a gate wiring that supplies a driving signal to a gate electrode of the first selecting thin-film transistor, is disposed between the plurality of insulating layers; 
 a signal processing unit configured to process a signal from the imaging apparatus; 
 a recording unit configured to record a signal from the signal processing unit; 
 a display unit configured to display a signal from the signal processing unit; 
 a transmission processing unit configured to transmit a signal supplied from the signal processing unit; and 
 a radiation source configured to generate the radiation, 
 wherein each of the pixels further includes a second selecting thin-film transistor electrically connected to the gate wiring, and 
 wherein each of the source electrode and the drain electrode of the reading thin-film transistor is electrically connected to either one of the first selecting thin-film transistor and the second selecting thin-film transistor. 
 
   
   
     7. The radiation imaging system according to  claim 6 , wherein each of the plurality of insulating layers has a thickness larger than a thickness of a gate insulating layer of each of the plurality of thin-film transistors. 
   
   
     8. The radiation imaging system according to  claim 6 , wherein the thickness of each of the plurality of insulating layers is between 1 μm and 10 μm, inclusive. 
   
   
     9. The radiation imaging system according to  claim 6 , wherein each of the pixels further includes a resetting thin-film transistor connected to the conversion element and configured to supply a reset potential. 
   
   
     10. The radiation imaging system according to  claim 6 , wherein each of the pixels further includes a transferring thin-film transistor electrically connected between the conversion element and the signal wiring and configured to transfer electric charge obtained by conversion performed by the conversion element.