Ion implanter with function of compensating wafer cut angle and ion implantation method using the same

Abstract

Provided are an ion implanter for compensating for a wafer cut angle and an ion implantation method using the same. The ion implanter may include an orienter for rotating a wafer mounted on an alignment stage thereof to align a notch of the wafer and a wafer stage for mounting thereon the wafer whose notch has been aligned. The ion implanter may further include an ion implantation angle adjustment unit for adjusting an angle of the wafer stage, a cut angle measurement unit for measuring the wafer cut angle while the wafer is mounted and rotated on the alignment stage, and a controller for controlling the ion implantation angle adjustment unit to compensate for the measured wafer cut angle.

1. An ion implanter for compensating for a wafer cut angle, the ion implanter comprising:
 an orienter adapted to rotate a wafer mounted on an alignment stage thereof to align a notch of the wafer; 
 a wafer stage adapted to have the wafer whose notch has been aligned mounted thereon; 
 an ion implantation angle adjustment unit adapted to adjust an angle of the wafer stage; 
 a cut angle measurement unit adapted to measure the wafer cut angle while the wafer is mounted and rotated on the alignment stage; and 
 a controller adapted to calculate the wafer cut angle and to control the ion implantation angle adjustment unit to compensate for the calculated wafer cut angle. 
 
   
   
     2. The implanter of  claim 1 , wherein the cut angle measurement unit includes:
 a beam generator adapted to generate and irradiate a beam into the wafer; and 
 a detector adapted to receive the beam that is irradiated from the beam generator and reflected from the rotating wafer and to generate a detection signal. 
 
   
   
     3. The implanter of  claim 2 , wherein the cut angle measurement unit further includes a beam path adjustment unit adapted to adjust a path of the beam irradiated into the wafer to make the beam inclinedly incident on the wafer. 
   
   
     4. The implanter of  claim 2 , wherein the controller is adapted to derive, based on the detection signal, a variation of an intensity amount and/or a wavelength of the beam that is caused by rotation of the wafer and to calculate the wafer cut angle based on the variation of the intensity amount and/or the wavelength of the beam. 
   
   
     5. The implanter of  claim 4 , wherein the controller is adapted to calculate the wafer cut angle using pre-stored data representing a relationship between the wafer cut angle and the variation of the intensity amount and/or the wavelength of the beam. 
   
   
     6. An ion implantation method for compensating for a wafer cut angle, the method comprising:
 mounting a wafer on a support element; 
 manipulating the support element so as to align a notch of the wafer; 
 calculating the wafer cut angle; 
 adjusting an ion implantation angle of the wafer in consideration of the calculated wafer cut angle; and 
 injecting an ion beam to implant ions into the wafer. 
 
   
   
     7. The method of  claim 6 , wherein the step of calculating the wafer cut angle includes:
 irradiating a beam into the wafer and receiving the beam that is reflected from the rotating wafer; 
 generating a detection signal based on the received beam; 
 deriving, based on the detection signal, a variation of an intensity amount and/or a wavelength of the beam that is caused by rotation of the wafer; and 
 calculating the wafer cut angle based on the variation of the intensity amount and/or the wavelength of the beam. 
 
   
   
     8. The method of  claim 7 , wherein a path of the beam irradiated into the wafer is adjusted to make the beam inclinedly incident on the wafer. 
   
   
     9. The method of  claim 7 , wherein the wafer cut angle is calculated using pre-stored data representing a relationship between the wafer cut angle and the variation of the intensity amount and/or the wavelength of the beam.