Non-volatile memory copy back

Abstract

Data move operations in a memory device are included that enable identification of data errors. During a write operation, identified errors are flagged and used to provide an error status during the data move operation. Results of the error detection can be accessed by a memory controller for data repair operations by the controller.

1. A method of operating a non-volatile flash memory device comprising:
 storing data at a first memory location using a pseudo pass function; 
 setting a flag to indicate that a multi-level cell bit has been programmed via a pseudo pass function; 
 moving data from the first memory array location to a second memory array location; 
 erasing the first memory array location; and 
 moving the data from the second memory array location to the first memory array location. 
 
   
   
     2. The method of  claim 1 , wherein moving the data from the second memory array location comprises giving the user the option through a user command to the copy back the data from the second memory location to the first memory location. 
   
   
     3. The method  claim 1 , wherein setting the flag comprises storing the flag of the pseudo pass function in a register. 
   
   
     4. The method of  claim 1 , wherein moving data comprises reading the flag with an external memory controller. 
   
   
     5. The method of  claim 4 , wherein reading the flag comprises using an output of the flag to correct the data via external data correction. 
   
   
     6. The method of  claim 1 , wherein setting the flag comprises setting the number of programs in the pseudo pass function by a user communicated value. 
   
   
     7. The method of  claim 1 , wherein moving data from the first memory location comprises using an output of the pseudo pass function for data correction during moving data from the first memory location. 
   
   
     8. The method of  claim 1 , wherein moving data from the second memory location comprises using an output of the pseudo pass function for data correction during moving data from the second memory location. 
   
   
     9. The method of  claim 1 , wherein storing data includes storing data in a memory cell device can store multiple bits of data per cell. 
   
   
     10. A method of operating a non-volatile, multi-level cell memory device, comprising:
 storing data at a first memory location using a pseudo pass function; 
 storing in a register a pseudo pass function programming flag; 
 moving, internally in the device, multi-level data from the first memory array location to a second memory array location; 
 erasing the first memory array location; and 
 moving the data from the second memory array location to the first memory array location. 
 
   
   
     11. The method of  claim 10 , wherein erasing comprises preventing data disturb condition in the first memory array location 
   
   
     12. The method of  claim 10 , wherein moving from the first memory array location includes reading the moved data. 
   
   
     13. The method of  claim 10 , wherein moving from the first memory array location includes performing error correction on moved data. 
   
   
     14. The method of  claim 10 , wherein moving from the first memory array location includes reading, in a controller, the stored programming flag, and instructing, if a certain flag value is read, a memory controller to read the data and perform error correction. 
   
   
     15. The method of  claim 14 , wherein storing data includes storing data in a NAND Flash memory array. 
   
   
     16. A method of operating a non-volatile, multi-level cell memory device, comprising:
 performing a pseudo pass function on data at a first memory location; 
 writing an error flag in an error register to indicate a location of error data, if any, within the first memory location; 
 moving, internally in the device, multi-level data from the first memory array location to a second memory array location; 
 erasing the first memory array location; and 
 moving the data from the second memory array location to the first memory array location. 
 
   
   
     17. The method of  claim 16 , wherein reading the flag comprises using an output of the flag to correct the data via an external data correction. 
   
   
     18. The method of  claim 16 , wherein writing an error flag comprises setting the number of programs in the pseudo pass function by a user communicated value. 
   
   
     19. The method of  claim 16 , wherein moving data from the first memory location comprises using an output of the pseudo pass function for data correction during moving data from the first memory location. 
   
   
     20. The method of  claim 16 , wherein moving from the first memory array location includes performing error correction on moved data. 
   
   
     21. The method of  claim 16 , wherein moving from the first memory array location includes reading, in a controller, the stored programming flag, and instructing, if a certain flag value is read, a memory controller to read the data and perform error correction. 
   
   
     22. The method of  claim 16 , wherein performing a pseudo pass function includes performing a pseudo pass function in a NOR flash memory array.