Doping method and manufacturing method for a semiconductor device

Abstract

A doping method includes implanting first impurity ions into a semiconductor substrate, so as to form a damaged region in the vicinity of a surface of the semiconductor substrate, the first impurity ions not contributing to electric conductivity; implanting second impurity ions into the semiconductor substrate through the damaged region, the second impurity ions having an atomic weight larger than the first impurity ions and contributing to the electric conductivity; and heating the surface of the semiconductor substrate with a light having a pulse width of about 0.1 ms to about 100 ms, so as to activate the second impurity ions.

1. A doping method, comprising:
 implanting first impurity ions into a semiconductor substrate by a plasma source ion implantation to form a damaged region in the vicinity of a surface of the semiconductor substrate, the first impurity ions not contributing to electric conductivity of the semiconductor substrate; 
 forming an irregularity on the surface of the semiconductor substrate by sputtering the surface of the semiconductor substrate in the plasma source ion implantation; 
 implanting second impurity ions into the semiconductor substrate through the damaged region, the second impurity ions having an atomic weight larger than the first impurity ions and contributing to the electric conductivity; and 
 heating the surface of the semiconductor substrate with a flash lamp light having a pulse width of about 0.1 ms to about 100 ms to activate the second impurity ions, 
 wherein a pitch of the irregularity is less than a peak wavelength of the flash lamp light. 
 
   
   
     2. The doping method of  claim 1 , wherein the second impurity ions are implanted by a plasma source ion implantation. 
   
   
     3. The doping method of  claim 2 , wherein the second impurity ions are deposited on the surface of the semiconductor substrate. 
   
   
     4. The doping method of  claim 1 , wherein the first impurity ions are helium ions. 
   
   
     5. The doping method of  claim 1 , wherein the first impurity ions are hydrogen ions. 
   
   
     6. The doping method of  claim 1 , wherein the damaged region is amorphized. 
   
   
     7. The doping method of  claim 1 , wherein the semiconductor substrate is irradiated by the flash lamp light while maintaining a temperature of the semiconductor substrate in a range of about 300° C. to about 600° C. 
   
   
     8. The doping method of  claim 1 , wherein an implanted depth of the first impurity ions from the surface of the semiconductor substrate is less than an implanted depth of the second impurity ions. 
   
   
     9. A manufacturing method of a semiconductor device, comprising:
 forming an isolation region on a semiconductor substrate that separates a first element region from a second element region; 
 depositing a gate insulating film on top of the first and second element region; 
 forming a gate electrode on top of the gate insulating film; 
 implanting first impurity ions using the gate electrode as a mask by a plasma source ion implantation to form damaged regions in the vicinity of a surface of the semiconductor substrate between the gate insulating film and the isolation region, the first impurity ions not contributing to electric conductivity of the semiconductor substrate; 
 forming an irregularity on the surface of the semiconductor substrate by sputtering the surface of the semiconductor substrate in the plasma source ion implantation; 
 implanting second impurity ions into the semiconductor substrate through the damaged regions, the second impurity ions having an atomic weight larger than the first impurity ions and contributing to the electric conductivity; and 
 heating the surface of the semiconductor substrate with a flash lamp light having a pulse width of from 0.1 milliseconds to 100 milliseconds to form extension regions of source-drain by activating the second impurity ions, 
 wherein a pitch of the irregularity is less than a peak wavelength of the flash lamp light. 
 
   
   
     10. The manufacturing method of  claim 9 , wherein the second impurity ions are implanted by a plasma source ion implantation. 
   
   
     11. The manufacturing method of  claim 10 , wherein the second impurity ions are deposited on the surface of the semiconductor substrate. 
   
   
     12. The manufacturing method of  claim 9 , wherein the first impurity ions are helium ions. 
   
   
     13. The manufacturing method of  claim 9 , wherein the first impurity ions are hydrogen ions. 
   
   
     14. The manufacturing method of  claim 9 , wherein the damaged region is amorphized. 
   
   
     15. The manufacturing method of  claim 9 , wherein the semiconductor substrate is irradiated by the flash lamp light while maintaining a temperature of the semiconductor substrate in a range of about 300° C. to about 600° C. 
   
   
     16. The manufacturing method of  claim 9 , further comprising:
 before implanting the first impurity ions, forming a sidewall spacer on side surfaces of the gate electrode and the gate insulating film; and 
 implanting third impurity ions into the semiconductor substrate using the gate electrode and the sidewall spacer as a mask, the third impurity ions contributing to the electric conductivity. 
 
   
   
     17. The method of  claim 16 , further comprising, after forming the extension regions, forming another sidewall spacer on side surfaces of the gate electrode and the gate insulating film. 
   
   
     18. The manufacturing method of  claim 9 , wherein an implanted depth of the first impurity ions from the surface of the semiconductor substrate is less than an implanted depth of the second impurity ions.