US7479627B2ExpiredUtilityA1

Semiconductor device having transparent member and manufacturing method of the same

Assignee: FUJITSU MICROELECTRONICS LTDPriority: Feb 9, 2006Filed: Apr 24, 2006Granted: Jan 20, 2009
Est. expiryFeb 9, 2026(expired)· nominal 20-yr term from priority
H10W 90/756H10F 39/811H10F 39/011H10F 39/804H10F 39/12
85
PatentIndex Score
14
Cited by
16
References
11
Claims

Abstract

A semiconductor device, includes a semiconductor substrate having a main surface where a light receiving element area is formed; a projection part provided in the periphery of the light receiving element area on the main surface of the semiconductor substrate; an adhesive material layer provided in the external periphery of the projection part on the main surface of the semiconductor substrate; and a transparent plate supported by the projection part and fixed above the light receiving element area by the adhesive material layer.

Claims

exact text as granted — not AI-modified
1. A semiconductor device, comprising: a semiconductor substrate having a main surface where a light receiving element area is formed; a projection part provided in the periphery of the light receiving element area on the main surface of the semiconductor substrate; an adhesive material layer provided in the external periphery of the projection part on the main surface of the semiconductor substrate; a transparent plate supported by the projection part and fixed above the light receiving element area by the adhesive material layer, wherein the projection part comes in contact with a lower surface of the transparent plate; the projection part and the transparent plate are made of materials different from each other; wherein the projection part is formed by a first projection part and a second projection part; and the adhesive layer is provided between the first projection part and the second projection part; wherein the semiconductor substrate is fixed to a supporting substrate; a piercing electrode electrically connecting the semiconductor substrate and the supporting substrate is formed so as to pierce inside of the semiconductor substrate; and the piercing electrode is provided in the semiconductor substrate between the first projection part and the second projection part. 
     
     
       2. The semiconductor device as claimed in  claim 1 ,
 wherein the semiconductor substrate is fixed to a supporting substrate; and 
 a piercing electrode electrically connecting the semiconductor substrate and the supporting substrate is formed so as to pierce inside of the semiconductor substrate. 
 
     
     
       3. The semiconductor device as claimed in  claim 2 ,
 wherein the projection part is formed between the light receiving element area and a part of the main surface of the semiconductor substrate, the part corresponding to where the piercing electrode is formed. 
 
     
     
       4. The semiconductor device as claimed in  claim 2 ,
 wherein the projection part is formed outside of a part of the main surface of the semiconductor substrate, the part corresponding to where the piercing electrode is formed. 
 
     
     
       5. The semiconductor device as claimed in  claim 2 ,
 wherein the projection part is formed on a part of the main surface of the semiconductor substrate, the part corresponding to where the piercing electrode is formed. 
 
     
     
       6. The semiconductor device as claimed in  claim 2 ,
 wherein the piercing electrode is formed in the semiconductor substrate outside of the light receiving element area. 
 
     
     
       7. The semiconductor device as claimed in  claim 1 ,
 wherein the projection part is formed on the main surface of the semiconductor substrate so as to surround the light receiving element area; and 
 the projection part includes a curved line part. 
 
     
     
       8. The semiconductor device as claimed in  claim 1 ,
 wherein a coefficient of viscosity of the adhesive layer is equal to or less than 1 Pa·s. 
 
     
     
       9. The semiconductor device as claimed in  claim 1 ,
 wherein a filler is added into the adhesive layer. 
 
     
     
       10. The semiconductor device as claimed in  claim 1 ,
 wherein the projection part is formed by a material selected from a group consisting of a liquid state resist material, a dry film, polyimide, and a nitride film using photolithography. 
 
     
     
       11. The semiconductor device as claimed in  claim 1 ,
 wherein the adhesive material layer has the same height as the height of the projection part.

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