Semiconductor light-emitting device

Abstract

A semiconductor light-emitting device and method for manufacturing the semiconductor light-emitting device includes a mask layer etching process on first and second mask layers provided on a Group-III nitride-based compound semiconductor substrate, the mask layer with a higher etching rate being closer to the p-type semiconductor layer; a semiconductor layer etching process; a side-etching process that selectively etches the side of the mask layer with the high etching rate to define a groove portion with a portion of the p-type semiconductor layer exposed; a ZrO 2 film forming process that forms a ZrO 2 film so as to cover the exposed p-type semiconductor layer; an Al 2 O 3 film forming process that forms an Al 2 O 3 film so as to cover the ZrO 2 film; a mask layer removing process; and an electrode layer forming process. The method for manufacturing the semiconductor light-emitting device increases the yield of lift-off with respect to the p-type semiconductor layer and can produce a semiconductor light-emitting device with an improved voltage resistance.

1. A semiconductor light-emitting device comprising:
 a Group-III nitride-based compound semiconductor expressed by Al x Ga y In 1-x-y N (where, 0≦x≦1; 0≦y≦1; 0≦x+y≦1) and including a substrate, an n-type semiconductor layer arranged on the substrate, an active layer arranged on the n-type semiconductor layer, and a p-type semiconductor layer arranged on the active layer; 
 a mesa portion protruding above the active layer; 
 a ZrO 2  film arranged to cover the mesa portion from an inner side along an edge of a top surface to a side surface of the mesa portion so as to expose the top surface of the mesa portion; 
 an Al 2 O 3  film arranged to cover the ZrO 2  film so as to expose the top surface of the mesa portion; and 
 an electrode layer arranged to cover the mesa portion from above the ZrO 2  film and the Al 2 O 3  film and electrically connected to the p-type semiconductor layer; wherein 
 neither of the ZrO 2  film and the Al 2 O 3  film cover a side surface of the active layer below the mesa portion. 
 
     
     
       2. The semiconductor light-emitting device according to  claim 1 , wherein a wall surface along the edge of the top surface of the mesa portion of the ZrO 2  film and the Al 2 O 3  film is angled towards the top surface of the mesa portion. 
     
     
       3. The semiconductor light-emitting device according to  claim 1 , wherein the wall surface includes a two-step tiered structure. 
     
     
       4. The semiconductor light-emitting device according to  claim 1 , wherein a width from the edge of the top surface of the mesa portion where the ZrO 2  film and the Al 2 O 3  film come in contact with the top surface of the mesa portion is from about 0 to about 0.5 μm. 
     
     
       5. The semiconductor light-emitting device according to  claim 1 , wherein the Al 2 O 3  film completely covers a top surface of the ZrO 2  film.