Method of manufacturing a semiconductor device having an alignment mark

Abstract

A method of manufacturing a semiconductor device includes providing a substrate and forming a projecting alignment mark. The substrate includes an insulating layer and a semiconductor layer on the insulating layer, and the substrate includes device areas and a scribe line area which surrounds the device area in the semiconductor layer. The projecting alignment mark is formed on the scribe line area.

1. A method manufacturing a semiconductor device comprising:
 providing a substrate which has an insulating layer and a semiconductor layer on the insulating layer, wherein the substrate has a device area and a scribe line area which surrounds the device area in the semiconductor layer; and 
 forming a projecting alignment mark on the scribe line area, said forming a projection alignment mark comprising 
 forming a silicon dioxide layer on the semiconductor layer, 
 removing a portion of the silicon dioxide layer to form a window that exposes the semiconductor layer at the scribe line area, 
 forming an alignment mark layer in the window, and 
 patterning the alignment mark layer into a frame-shaped portion, wherein the alignment mark layer is made by an epitaxial growth method. 
 
     
     
       2. The method of  claim 1 , wherein the alignment mark layer is made of silicon. 
     
     
       3. The method of  claim 1 , wherein the alignment mark layer is made of poly crystalline silicon. 
     
     
       4. The method of  claim 1 , further comprising oxidizing the semiconductor layer which is adjacent to the projecting alignment mark. 
     
     
       5. The method of  claim 4 , wherein said oxidizing the semiconductor layer forms an isolating layer. 
     
     
       6. A method manufacturing a semiconductor device comprising:
 providing a substrate which has an insulating layer and a semiconductor layer on the insulating layer, wherein the substrate has a device area and a scribe line area which surrounds the device area in the semiconductor layer; and 
 forming a projecting alignment mark on the scribe line area, said forming a projecting alignment mark comprising
 forming a silicon dioxide layer on the semiconductor layer, 
 removing a portion of the silicon dioxide layer to form a window that exposes the semiconductor layer at the scribe line area, 
 forming an alignment mark layer in the window by an epitaxial growth method, 
 patterning the alignment mark layer into a frame-shaped portion, 
 forming a second silicon dioxide layer on the alignment mark, 
 forming a silicon nitride layer on the second silicon dioxide layer, 
 removing portions of the silicon nitride layer within the scribe line area adjacent the frame-shaped portion and within peripheral areas of the device area to form openings, and 
 oxidizing portions of semiconductor layer through the openings. 
 
 
     
     
       7. The method of  claim 6 , wherein the alignment mark layer is made of silicon. 
     
     
       8. The method of  claim 6 , wherein the alignment mark layer is made of poly crystalline silicon. 
     
     
       9. The method of  claim 6 , wherein said oxidizing the semiconductor layer forms an isolating layer.