US6687446B2ExpiredUtilityA1

Optical waveguide device and manufacturing method therefor

Assignee: OKI ELECTRIC IND CO LTDPriority: Jun 28, 2000Filed: Dec 6, 2000Granted: Feb 3, 2004
Est. expiryJun 28, 2020(expired)· nominal 20-yr term from priority
G02F 1/0147G02B 2006/1215G02B 6/125G02B 2006/12119G02B 6/122G02B 6/13G02B 2006/12147G02F 1/025G02B 2006/12038G02B 2006/12061
79
PatentIndex Score
32
Cited by
8
References
4
Claims

Abstract

An optical waveguide device having a large difference in specific refractive index and manufacturing method therefor. An embedded silicon oxide layer of a Silicon on Insulator substrate is used as an under cladding 102, a core 103 is formed by processing the silicon layer of this Silicon on Insulator substrate, and an upper cladding 104 is formed by depositing a silicon oxide film on the surface of the Silicon on Insulator substrate. Because the difference in refractive index between silicon and silicon oxide is large, it is possible to achieve an optical waveguide with a large difference in specific refractive index. As a result of increasing the difference in specific refractive index of an optical waveguide, a smaller and lower-cost optical circuit can be achieved. In addition, because a Silicon on Insulator substrate is used, the number of manufacturing processes can be reduced.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
       1. An optical waveguide device, comprising: 
       an under cladding, which is formed from silicon oxide;  
       a core, which is formed on top of the under cladding with silicon, and which propagates light; and  
       an upper cladding, which is formed from silicon oxide, and which covers the side surfaces and upper surface of said core;  
       wherein the width and height of said core are 0.3 μm or less.  
     
     
       2. An optical waveguide device, comprising: 
       an under cladding, which is formed from silicon oxide;  
       a core, which is formed on top of the under cladding with silicon, and which propagates light; and  
       an upper cladding, which is formed from silicon oxide, and which covers the side surfaces and upper surface of said core;  
       wherein the radius of curvature of said core is 0.5-1.0 mm.  
     
     
       3. An optical waveguide device manufacturing method, comprising the steps of: 
       forming a core by etching the silicon layer of a Silicon on Insulator substrate using a mask pattern, and exposing a silicon oxide layer used as an under cladding; and  
       forming an upper cladding by depositing a silicon oxide film on surfaces of said core and said under cladding;  
       wherein the width and height of said core is 0.3 μm or less.  
     
     
       4. An optical waveguide device manufacturing method, comprising the steps of: 
       forming a core by etching the silicon layer of a Silicon on Insulator substrate using a mask pattern, and exposing a silicon oxide layer used as an under cladding; and  
       forming an upper cladding by depositing a silicon oxide film on surfaces of said core and said under cladding;  
       wherein the radius of curvature of said core is 0.5-1.0 mm.

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