Method for producing nanostructures in thin films

Abstract

The invention relates to a method for producing a layer with a sub-micrometre structure on a substrate. First, a layer is formed on the substrate. Agents for creating elastic strains are then formed in at least one predetermined position on the layer and the layer is then subjected to a strain-dependent solid-state reaction. This results in material separating and consequently, in the layer being structured in this position.

What is claimed is:  
     
       1. A method of producing a layer having a structure in a form of at least one line having a submicrometer width, comprising the steps of: 
       (a) providing a silicon support or a glass support as a substrate;  
       (b) depositing a pure metal film on said substrate;  
       (c) applying to said pure metal film a mask layer and structuring said mask layer so that an edge of the mask layer is formed along a location for said line, thereby forming a layer system consisting essentially of said substrate, said film and said layer; and  
       (d) subjecting said layer system to a thermal treatment at a temperature and for a length of time sufficient to generate tension in said film to produce a tension-dependent separation in said film below said edge with a submicrometer width forming said line solely by the action of the temperature for the said time.  
     
     
       2. The method defined in  claim 1  wherein said metal film is composed of a metal selected from the group which consists of cobalt, titanium, nickel, palladium, tungsten, tantalum and niobium. 
     
     
       3. The method defined in  claim 2  wherein the mask layer is composed of a material selected from the group which consists of SiO 2  and Si 3 N 4 . 
     
     
       4. A method of producing a layer having a structure in a form of at least one line having a submicrometer width, comprising the steps of: 
       (a) providing a silicon support or a glass support as a substrate;  
       (b) depositing a pure metal film on said substrate;  
       (c) applying to said pure metal film a mask layer and structuring said mask layer so that an edge of the mask layer is formed along a location for said line, thereby forming a layer system consisting essentially of said substrate, said film and said layer; and  
       (d) subjecting said layer system to a thermal treatment at a temperature and for a length of time sufficient to generate tension in said film to produce a tension-dependent separation in said film below said edge with a submicrometer width forming said line, said metal film being composed of a metal selected from the group which consists of cobalt, titanium, nickel, palladium, tungsten, tantalum and niobium, said mask layer is composed of a material selected from the group which consists of SiO 2  and Si 3 N 4 , said layer system being subjected in step (d) to a temperature having a maximum of 750° C. for a period sufficient to produce said separation.  
     
     
       5. The method defined in  claim 4  wherein said substrate is silicon, said method further comprising the step of transforming metal of said film to a silicide during step (d). 
     
     
       6. The method defined in  claim 5  further comprising the step of modifying said substrate in a region thereof below said edge.