Method for continuous processing of semiconductor wafers

Abstract

An electrochemical reaction assembly and methods of inducing electrochemical reactions, such as for deposition of materials on semiconductor substrates. The assembly and method achieve a highly uniform thickness and composition of deposition material or uniform etching or polishing on the semiconductor substrates by retaining the semiconductor substrates on a moving cathode immersed in an appropriate reaction solution wherein a wire mesh anode rotates about the moving cathode during electrochemical reaction.

What is claimed is:  
     
       1. A method of processing semiconductor substrates, comprising: 
       disposing a hollow first electrode within a chamber;  
       providing a second electrode configured to removably retain and electrically communicate with at least one semiconductor substrate, the second electrode configured to be moved through the hollow first electrode;  
       disposing a reaction solution within the chamber;  
       providing an electrical power source to be communicated with the hollow first electrode and the second electrode;  
       engaging at least one semiconductor substrate with the second electrode; and  
       immersing the at least one semiconductor substrate in the reaction solution within the chamber and moving at least a portion of the second electrode through the hollow first electrode while communicating the electrical power source with the hollow first electrode and the second electrode.  
     
     
       2. The method of  claim 1 , further comprising communicating the electrical power source so that the hollow first electrode serves as an anode and the second electrode serves as a cathode. 
     
     
       3. The method of  claim 1 , further comprising communicating the electrical power source so that the hollow first electrode serves as a cathode and the second electrode serves as an anode. 
     
     
       4. The method of  claim 1 , further comprising rotating at least a portion of the second electrode within the hollow first electrode. 
     
     
       5. The method of  claim 4 , further comprising rotating the second electrode to move the at least one semiconductor substrate in a substantially corkscrew path. 
     
     
       6. The method of  claim 1 , further comprising providing the hollow first electrode with an irregular surface. 
     
     
       7. The method of  claim 1 , further comprising providing the hollow first electrode with a plurality of perforations. 
     
     
       8. The method of  claim 1 , wherein providing the hollow first electrode comprises forming at least a portion of the hollow first electrode from a wire mesh. 
     
     
       9. The method of  claim 8 , further comprising providing the hollow first electrode with an irregular surface. 
     
     
       10. The method of  claim 8 , further comprising providing the hollow first electrode with a corrugated surface. 
     
     
       11. The method of  claim 1 , further comprising providing a rotation mechanism adapted to operationally engage the hollow first electrode to rotate the hollow first electrode about the second electrode. 
     
     
       12. The method of  claim 1 , further comprising rotating the hollow first electrode about the second electrode. 
     
     
       13. The method of  claim 1 , wherein providing the second electrode comprises providing the second electrode with multiple sides, each side of the multiple sides adapted to engage at least one semiconductor substrate. 
     
     
       14. The method of  claim 1 , further comprising providing the second electrode with at least one article retainer for engaging the at least one semiconductor substrate. 
     
     
       15. The method of  claim 1 , further comprising monitoring a flux path between the hollow first electrode and the second electrode while communicating the electrical power source with the hollow first electrode and the second electrode. 
     
     
       16. The method of  claim 1 , further comprising monitoring a pH level of the reaction solution. 
     
     
       17. The method of  claim 1 , further comprising heating the reaction solution. 
     
     
       18. The method of  claim 17 , further comprising maintaining the reaction solution within a preselected temperature range. 
     
     
       19. The method of  claim 1 , wherein disposing the reaction solution comprises disposing a reaction solution including at least one of a deposition material, a conductive material, a metal conductive material, ions of a metal, a photoresist material, an electrophoretic material, an etching material, or a polishing material. 
     
     
       20. The method of  claim 1 , further comprising providing a processing control scheme dependent on at least one controllable processing variable. 
     
     
       21. The method of  claim 20 , wherein providing the processing control scheme comprises providing a processing control scheme based on controlling at least one controllable processing variable selected from the group consisting of reaction solution temperature, reaction solution pH, electrical power, and electrode motion speed. 
     
     
       22. The method of  claim 1 , further comprising controlling processing of the at least one semiconductor substrate based upon a value of at least one controllable processing variable. 
     
     
       23. The method of  claim 22 , wherein controlling processing of the at least one semiconductor substrate comprises controlling the processing of the at least one semiconductor substrate based upon a value of at least one controllable processing variable selected from the group consisting of reaction solution temperature, reaction solution pH, electrical power, and electrode motion speed. 
     
     
       24. The method of  claim 1 , further comprising controlling processing of the at least one semiconductor substrate by monitoring and controlling at least one controllable processing variable. 
     
     
       25. The method of  claim 24 , wherein monitoring and controlling the at least one controllable processing variable comprises monitoring and controlling at least one controllable processing variable selected from the group consisting of reaction solution temperature, reaction solution pH, electrical power, and electrode motion speed.