Planarizers for spin etch planarization of electronic components

Abstract

An electronic component contemplated comprises a) a substrate layer, b) a dielectric layer coupled to the substrate layer, c) a barrier layer coupled to the dielectric layer, d) a conductive layer coupled to the barrier layer, and e) a protective layer coupled to the conductive layer. The electronic component contemplated herein can be produced by a) providing a substrate; b) coupling a dielectric layer to the substrate; c) coupling a barrier layer to the dielectric layer; d) coupling a conductive layer to the barrier layer; and e) coupling a protective layer to the conductive layer. The protective layer may then be cured to a desirable hardness. A method of planarizing a conductive surface of an electronic component may comprise a) introducing or coupling a protective layer onto a conductive layer; b) dispersing the protective layer across the conductive layer; c) curing the protective layer; d) introducing an etching solution onto the conductive layer; and e) etching the conductive surface to substantial planarity.

What is claimed is:  
     
       1. An electronic component, comprising: 
       a substrate layer;  
       a dielectric material coupled to the substrate layer;  
       a barrier layer coupled to the dielectric material;  
       a conductive layer coupled to the barrier layer; and  
       a protective layer coupled to the conductive layer, wherein the protective layer comprises at least one metal, at least one salt-like material, at least one organic spin-on polymer material or at least one metal alloy.  
     
     
       2. The electronic component of  claim 1 , wherein the dielectric material is porous and has a dielectric constant less than 3.0. 
     
     
       3. The electronic component of  claim 1 , wherein the barrier layer comprises tantalum, tantalum nitride, a stacked tantalum/tantalum nitride sandwich, or tungsten nitride (WN). 
     
     
       4. The electronic component of  claim 1 , wherein the conductive layer comprises a transition metal. 
     
     
       5. The electronic component of  claim 4 , wherein the transition metal is copper. 
     
     
       6. The electronic component of  claim 1 , wherein the protective layer comprises a viscous material. 
     
     
       7. The electronic component of  claim 6 , wherein the viscous material hardens when a curing process is applied to the viscous material. 
     
     
       8. The electronic component of  claim 1 , wherein the protective layer does not etch the conductive layer. 
     
     
       9. The electronic component of  claim 1 , wherein the at least one metal or the at least one metal alloy comprise copper. 
     
     
       10. The electronic component of  claim 1 , wherein the at least one metal or the at least one metal alloy comprise nickel. 
     
     
       11. The electronic component of  claim 1 , wherein the at least one metal or the at least one metal alloy comprise indium.