System for real-time control of semiconductor wafer polishing

Abstract

A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

What is claimed is:  
     
       1. A polishing system comprising: 
       a platen subassembly defining a polishing area;  
       a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face;  
       a first heater supported by the polishing head for heating the wafer, the first heater including a heating filament supported by the polishing head; and  
       a second heater for heating the platen subassembly.  
     
     
       2. The polishing system of  claim 1 , wherein the polishing head includes pressure applicators for applying various localized pressures on individual regions of the semiconductor wafer to conform the wafer face to a selected contour. 
     
     
       3. The polishing system of  claim 1 , further comprising a polish control subsystem for monitoring polishing rates at various regions of the semiconductor wafer and adjusting a velocity of the platen. 
     
     
       4. A polishing system comprising: 
       a platen subassembly defining a polishing area;  
       a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face;  
       a first heater supported by the polishing head for heating the wafer, the first heater including a heating filament supported by the polishing head;  
       a second heater for heating the platen subassembly;  
       a controller operably coupled to the wafer polishing assembly for monitoring and managing at least one operational parameter of the wafer polishing assembly;  
       a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameter and outputting control information indicative of the set of desired operational parameters to the controller, the controller adjusting at least one operational parameter of the wafer polishing assembly in response to the control information from the processor to control wafer to wafer uniformity;  
       a fluid passage in fluid communication with the hollow interior;  
       a pump in fluid communication with the fluid passage and conducting fluid through the hollow interior;  
       the first heater including:  
       a fluid passage in fluid communication with the hollow interior;  
       a pump in fluid communication with the fluid passage and conducting fluid through the hollow interior; and  
       a heating element proximate the fluid passage.  
     
     
       5. A polishing system comprising: 
       a platen subassembly defining a polishing area;  
       a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face;  
       a first heater supported by the polishing head for heating the wafer, the first heater including a heating filament supported by the polishing head;  
       a second heater for heating the platen subassembly;  
       a controller operably coupled to the wafer polishing assembly for monitoring and managing at least one operational parameter of the wafer polishing assembly; and  
       a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameter and outputting control information indicative of the set of desired operational parameters to the controller, the controller adjusting at least one operational parameter of the wafer polishing assembly in response to the control information from the processor to control wafer to wafer uniformity.  
     
     
       6. A polishing system comprising: 
       a platen subassembly defining a polishing area;  
       a polishing head configured to selectively support a workpiece and holding a face of the workpiece in contact with the platen subassembly to polish the workpiece face;  
       a first heater supported by the polishing head for heating the workpiece, the first heater including a heating filament supported by the polishing head; and  
       a second heater for heating the platen subassembly.  
     
     
       7. The polishing system of  claim 6 , wherein the polishing head includes pressure applicators for applying various localized pressures on individual regions of the workpiece to conform the workpiece face to a selected contour. 
     
     
       8. The polishing system of  claim 6 , further comprising a polish control subsystem for monitoring polishing rates at various regions of the workpiece face and adjusting a velocity of the platen. 
     
     
       9. A polishing system comprising: 
       a platen subassembly defining a polishing area;  
       a polishing head configured to selectively support a workpiece and holding a face of the workpiece in contact with the platen subassembly to polish the workpiece face;  
       a first heater supported by the polishing head for heating the workpiece, the first heater including a heating filament supported by the polishing head;  
       a second heater for heating the platen subassembly;  
       a controller operably coupled to the workpiece polishing assembly for monitoring and managing at least one operational parameter of the workpiece polishing assembly;  
       a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameter and outputting control information indicative of the set of desired operational parameters to the controller, the controller adjusting at least one operational parameter of the workpiece polishing assembly in response to the control information from the processor to control workpiece to workpiece polishing uniformity;  
       a fluid passage in fluid communication with the hollow interior;  
       a pump in fluid communication with the fluid passage and conducting fluid through the hollow interior;  
       the first heater including:  
       a fluid passage in fluid communication with the hollow interior;  
       a pump in fluid communication with the fluid passage and conducting fluid through the hollow interior; and  
       a heating element proximate the fluid passage.  
     
     
       10. A polishing system comprising: 
       a platen subassembly defining a polishing area;  
       a polishing head configured to selectively support a workpiece and holding a face of the workpiece in contact with the platen subassembly to polish the workpiece face;  
       a first heater supported by the polishing head for heating the workpiece, the first heater including a heating filament supported by the polishing head;  
       a second heater for heating the platen subassembly;  
       a controller operably coupled to the workpiece polishing assembly for monitoring and managing at least one operational parameter of the workpiece polishing assembly; and  
       a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameter and outputting control information indicative of the set of desired operational parameters to the controller, the controller adjusting at least one operational parameter of the workpiece polishing assembly in response to the control information from the processor to control workpiece to workpiece polishing uniformity.  
     
     
       11. A polishing system comprising: 
       a platen subassembly defining a polishing area;  
       a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face;  
       a polish control subsystem configured to monitor polishing rates at various regions of the semiconductor wafer and adjust a velocity of the platen;  
       a first heater supported by the polishing head for heating the wafer, the first heater including a heating filament supported by the polishing head; and  
       a second heater for heating the platen subassembly.  
     
     
       12. A polishing system comprising: 
       a platen subassembly defining a polishing area;  
       a polishing head configured to selectively support a workpiece and holding a face of the workpiece in contact with the platen subassembly to polish the workpiece face;  
       a polish control subsystem configured to monitor polishing rates at various regions of the workpiece face and adjust a velocity of the platen;  
       a first heater supported by the polishing head for heating the workpiece, the first heater including a heating filament supported by the polishing head; and  
       a second heater for heating the platen subassembly.