US6330387B1ExpiredUtility

Coupled plasmon-waveguide resonance spectroscopic device and method for measuring film properties in the ultraviolet and infrared spectral ranges

Assignee: UNIV ARIZONAPriority: Nov 8, 1996Filed: Nov 23, 1999Granted: Dec 11, 2001
Est. expiryNov 8, 2016(expired)· nominal 20-yr term from priority
G01N 21/553
74
PatentIndex Score
42
Cited by
18
References
4
Claims

Abstract

A metallic (or semiconductor) layer is used with a prism to provide a surface plasmon wave under total reflection conditions of an incident light of predetermined wavelength outside the visible spectrum. The metal layer is selected with a refractive index as small as possible and an extinction coefficient as large as possible within the wavelength of interest and is covered with a solid dielectric layer characterized by predetermined optical parameters. This layer plays the role of a light waveguide that generates waveguide modes coupled to surface plasmons, resulting in a new set of resonances excited by both p- and s-polarized excitation light and characterized by much narrower spectra than produced by conventional SPR. In a particular embodiment of the invention, the dielectric layer is designed to serve both as a waveguide and as an electrode for monitoring simultaneously electrical characteristics and optical parameters of thin films and interfaces.

Claims

exact text as granted — not AI-modified
I claim:  
     
       1. In a surface-plasmon-resonance spectroscopic device, wherein a surface plasmon is excited by a light beam and propagated along a metallic or semiconductor film to measure a property of a sample material placed at an interface of an emergent medium, the improvement comprising a dielectric member inserted between said film and said emergent medium, wherein said dielectric member is selected such that coupled plasmon-waveguide resonance effects are produced within an observable range. 
     
     
       2. The device of claim  1 , further comprising a layer of semiconductive material between said dielectric member and said emergent medium. 
     
     
       3. A method for measuring a property of a sample material present at an interface of an emerging medium in a surface-plasmon-resonance spectroscopic device, wherein a surface plasmon is excited by a light beam and propagated along a metallic or semiconductor film, comprising the following steps: 
       (a) coating said film with a dielectric member selected such that coupled plasmon-waveguide resonance effects are produced within an observable range;  
       (b) placing said dielectric member at said interface of the emerging medium of the surface-plasmon-resonance spectroscopic device; and  
       (c) performing surface-plasmon-resonance spectroscopic measurements according to conventional procedures.  
     
     
       4. The method of claim  3 , further comprising the steps of placing a layer of semiconductive material between said dielectric member and said emergent medium and of also performing electrical measurements while carrying out step (c).

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