US6068913AExpiredUtility

Supported PCD/PCBN tool with arched intermediate layer

Assignee: SID CO LTDPriority: Sep 18, 1997Filed: Sep 18, 1997Granted: May 30, 2000
Est. expirySep 18, 2017(expired)· nominal 20-yr term from priority
B01J 2203/062B01J 2203/066C04B 2237/361B01J 3/062C23C 30/005B01J 2203/0685C04B 37/023C04B 2237/08B23B 2226/125E21B 10/5735B01J 2203/0655B01J 2203/0645C04B 37/025C04B 2237/086C04B 2237/64C04B 2237/401C04B 2237/704B23B 27/146C04B 2237/708B23B 2226/315Y10T428/24942Y10T428/31678B23P 15/28Y10T428/25
88
PatentIndex Score
154
Cited by
18
References
8
Claims

Abstract

A new PCD/PCBN tool and method for making the same involve the use of an intermediate layer of polycrystalline material between a substrate and an outer working layer. The intermediate layer is formulated to limit or prevent the amount of cobalt or other binders which may infiltrate the outer working layer and accelerate deterioration under high throughput conditions. In accordance with one aspect of the invention, the substrate is corrugate or rounded projections to both reduce stress and to decrease infiltration of cobalt through the polycrystalline structures. In accordance with another aspect of the invention, the bonding medium and/or binder agents in the intermediate layer may be selected to decrease mobility of cobalt and the like.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A new supported polycrystalline compact, the compact comprising: a substrate configured for receiving a polycrystalline element, the substrate having a plurality of projections;   an intermediate layer having a plurality of super hard crystals bonded together, and bonding medium therefor, the super hard crystals being at least 50 percent by volume of the intermediate layer, the intermediate layer being configured for nesting between the projections of the substrate and being bonded thereto; and   a polycrystalline outer layer bonded to the intermediate layer, said outer polycrystalline layer being isolated from the projections of the substrate by the intermediate layer.   
     
     
       2. The supported compact of claim 1, wherein the bonding medium comprises at least one of the group consisting of a carbide, nitride, a carbonitride of the IVb, Vb, VIb transition metals. 
     
     
       3. The supported compact of claim 1, wherein the outer layer and the intermediate layer each include plurality of crystals and bonding medium for holding the crystals together, and wherein the intermediate layer has a higher concentration of bonding medium than the outer layer. 
     
     
       4. The supported compact of claim 3, wherein the intermediate layer's content of bonding medium is at least 30% by volume. 
     
     
       5. The supported compact of claim 1, wherein said super hard crystals of the intermediate layer further comprises a fine grade polycrystalline material having a pre-bonding average particle size of about 0.5 to about 20 μm. 
     
     
       6. The supported compact of claim 1, wherein said intermediate layer further comprises a binding agent. 
     
     
       7. The supported compact of claim 6, wherein said binding agent further comprises at least one of the group consisting of group VIII metals. 
     
     
       8. The supported compact of claim 7, wherein said binding agent is a member selected from the group consisting of cobalt, nickel, and iron.

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