US6057181AExpiredUtility

Thin film transistor and method for fabricating same

34
Assignee: LG ELECTRONICS INCPriority: Sep 12, 1995Filed: Jan 6, 1999Granted: May 2, 2000
Est. expirySep 12, 2015(expired)· nominal 20-yr term from priority
Inventors:Woong-Kwon Kim
H10D 30/6743H10D 30/6737H10D 30/6729H10D 30/0321H10D 30/0316H10D 30/67
34
PatentIndex Score
2
Cited by
4
References
27
Claims

Abstract

A method for fabricating a thin film transistor having a substrate includes the steps of forming a gate electrode on the substrate and forming a gate insulating layer on the gate electrode and the substrate. Source and drain electrodes are formed having side surfaces facing each other on the gate insulating layer. An active layer is formed over the source and drain electrodes and the gate insulating layer. A silicide layer is formed on at least one of the side surfaces of the source and drain electrodes.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A method for fabricating a thin film transistor having a substrate, the method comprising the steps of: forming a gate electrode on the substrate;   forming a gate insulating layer on the gate electrode and the substrate;   forming source and drain electrodes having side surfaces facing each other on the gate insulating layer;   forming an active layer over the source and drain electrodes and the gate insulating layer; and   forming a silicide layer on at least one of the side surfaces of the source and drain electrodes.   
     
     
       2. The method for fabricating a thin film transistor according to claim 1, wherein at least one of the source and drain electrodes includes a metal. 
     
     
       3. The method for fabricating a thin film transistor according to claim 1, wherein the step of forming the active layer includes the step of performing a heat treatment to form the silicide layer. 
     
     
       4. The method for fabricating a thin film transistor according to claim 1, further comprising the step of forming a pixel electrode contacting one of the source and drain electrodes. 
     
     
       5. The method for fabricating a thin film transistor according to claim 4, wherein the step of forming the pixel electrode forms the silicide layer. 
     
     
       6. The method for fabricating a thin film transistor according to claim 4, wherein the step of forming the pixel electrode includes the step of performing a heat treatment, the heat treatment forming the silicide layer. 
     
     
       7. The method for fabricating a thin film transistor according to claim 1, further comprising the steps of: forming a passivation layer over the active layer, the source and drain electrodes, and the gate insulating layer, the passivation layer having a contact hole exposing a portion of one of the source and drain electrodes; and   forming a pixel electrode over the passivation layer and the contact hole, the pixel electrode contacting the portion of the one of the source and drain electrodes through the contact hole.   
     
     
       8. The method for fabricating a thin film transistor according to claim 7, wherein the step of forming the pixel electrode includes the step of forming the silicide layer. 
     
     
       9. The method for fabricating a thin film transistor according to claim 7, wherein the step of forming the pixel electrode includes the step of performing a heat treatment, the heat treatment also forming the silicide layer. 
     
     
       10. The method for fabricating a thin film transistor according to claim 7, further comprising the step of performing a heat treatment to form the silicide layer. 
     
     
       11. A method for fabricating a transistor having a substrate, the method comprising the steps of: forming a gate electrode on the substrate;   forming an insulating layer over the gate electrode and the substrate;   forming source and drain electrodes having side surfaces facing each other over the gate insulating layer;   forming an active layer over the source and drain electrodes and the insulating layer above the gate electrode;   forming a silicide layer on at least one of the side surfaces of the source and drain electrodes;   forming a pixel electrode in contact with one of the source and drain electrodes; and   forming a passivation layer over the active layer, the source and drain electrodes, and the pixel electrode.   
     
     
       12. The method for fabricating a thin film transistor according to claim 11, wherein the step of forming the silicide layer includes the step of performing a heat treatment. 
     
     
       13. The method for fabricating a thin film transistor according to claim 11, wherein the step of forming the pixel electrode simultaneously forms the silicide layer. 
     
     
       14. The method for fabricating a thin film transistor according to claim 13, wherein the step of forming the pixel electrode includes the step of performing a heat treatment, the heat treatment forming the silicide layer. 
     
     
       15. A method for fabricating a transistor having a substrate, the method comprising the steps of: forming a gate electrode on the substrate;   forming an insulating layer over the gate electrode and the substrate;   forming source and drain electrodes having side surfaces facing each other over the gate insulating layer;   forming an active layer over the source and drain electrodes and the insulating layer above the gate electrode;   forming a silicide layer on at least one of the side surfaces of the source and drain electrodes;   forming a passivation layer over the active layer, the source and drain electrodes, and the insulating layer, the passivation layer having a contact hole exposing a portion of one of the source and drain electrodes; and   forming a pixel electrode in contact with one of the source and drain electrodes through the contact hole.   
     
     
       16. The method for fabricating a thin film transistor according to claim 15, wherein the step of forming the silicide layer includes the step of performing a heat treatment. 
     
     
       17. The method for fabricating a thin film transistor according to claim 15, wherein the step of forming the pixel electrode simultaneously forms the silicide layer. 
     
     
       18. The method for fabricating a thin film transistor according to claim 17, wherein the step of forming the pixel electrode includes the step of performing a heat treatment, the heat treatment forming the silicide layer. 
     
     
       19. A method for fabricating a thin film transistor having a substrate, the method comprising the steps of: forming source and drain electrodes having side surfaces facing each other over the substrate;   forming an active layer over the source and drain electrodes and the substrate;   forming a silicide layer on at least one of the side surfaces of the source and drain electrodes;   forming a gate insulating layer on the active layer; and   forming a gate electrode over the gate insulating layer.   
     
     
       20. The method for fabricating a thin film transistor according to claim 19, further comprising the steps of: forming a pixel electrode in contact with one of the source and drain electrodes; and   forming a passivation layer over the gate electrode, the source and drain electrodes, and the pixel electrode.   
     
     
       21. The method for fabricating a thin film transistor according to claim 19, further comprising the steps of: forming a passivation layer over the gate electrode, the source and drain electrodes, and the substrate, the passivation layer having a contact hole exposing a portion of one of the source and drain electrodes; and   forming a pixel electrode over the passivation layer and in contact with one of the source and drain electrodes through the contact hole.   
     
     
       22. A method for fabricating a thin film transistor having a substrate, the method comprising the steps of: forming a gate electrode on the substrate;   forming a gate insulating layer on the gate electrode and the substrate;   forming a metal layer on the gate insulating layer;   forming an impurity-doped semiconductor layer over the metal layer;   selectively removing portions of the impurity-doped semiconductor layer to form source and drain regions;   selectively removing portions of the metal layer to form source and drain electrodes;   forming a silicide layer at an interface between the metal layer and the impurity-doped semiconductor layer; and   forming an active layer over the source and drain regions, the source and drain electrodes, and the gate insulating layer.   
     
     
       23. The method for fabricating a thin film transistor according to claim 22, wherein the step of forming the active layer includes the step of performing a heat treatment to form the silicide layer. 
     
     
       24. The method for fabricating a thin film transistor according to claim 22, the method further comprising the step of forming a pixel electrode connected to one of the source and drain electrodes, wherein the step of forming the pixel electrode forms the silicide layer. 
     
     
       25. The method for fabricating a thin film transistor according to claim 22, the method further comprising the step of selectively removing portions of the impurity-doped semiconductor layer and portions of the silicide layer using the active layer as a mask. 
     
     
       26. A method for fabricating a thin film transistor having a substrate, the method comprising the steps of: forming a gate electrode on the substrate;   forming a gate insulating layer on the gate electrode and the substrate;   forming source and drain electrodes on the gate insulating layer;   forming an impurity-doped semiconductor layer on the source and drain electrodes and the gate insulating layer;   forming a silicide layer at the interface of the impurity-doped semiconductor layer and the source and drain electrodes;   removing the impurity-doped layer semiconductor layer; and   forming an active layer over the silicide layer, the source and drain electrodes, and the gate insulating layer.   
     
     
       27. The method for fabricating a thin film transistor according to claim 26, the method further comprising the step of selectively removing portions of the silicide layer using the active layer as a mask.

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