Method for continuously making a semiconductor device

Abstract

A method of continuous manufacture of semiconductor integrated circuits, said method and apparatus adapted to contain the semiconductor substrate, semiconductor deposition coating processes, and etching processes within a substantially collocated series of process chambers so that the semiconductor travels from one chamber to the next without exposure to airborne impurities and contact with manufacturing personnel. The invention has particular utility in the high volume fabrication of large surface area semiconductor circuits such as active matrix liquid crystal displays. The present invention contains a roll-to-roll and continuous belt embodiment.

I claim: 
     
       1. A substantially continuous method of manufacturing semiconductor integrated circuits with a roll of semiconductor material threaded through a environmentally controlled process chamber or a plurality of environmentally controlled process chambers comprising the steps of: affixing semiconductor material onto a flexible film to form a continuous ribbon of semiconductor material;   cutting said semiconductor material with a laser beam that is normal to said flexible film, said laser beam not severing said flexible film, to provide strain relief at said cut to increase the flexibility of said semiconductor material;   winding said flexible film with semiconductor material thereon onto a drum, said drum diameter sufficient to wind said flexible film without damaging said semiconductor material thereon; and   conveying said flexible film with semiconductor material deposited thereon to a process station wherein a directed energy beam is directed toward said semiconductor material to either remove said flexible film or said semiconductor material, add additional material to said flexible film or said semiconductor material, or transform a physical property of said flexible film or said semiconductor material in an environmentally controlled process station.   
     
     
       2. The method of claim 1 further comprising the step of: winding an interlayer protective film onto said drum, sandwiching said interlayer protective film in between layers of said semiconductor material formed when wrapping said flexible film with semiconductor material deposited thereon onto said drum.   
     
     
       3. The method of claim 1 further comprising the steps of: depositing material onto said flexible film or said semiconductor material with a directed energy beam in a first environmentally controlled process chamber;   etching said flexible film, said semiconductor material or said deposited material with a directed energy beam in a second environmentally controlled processing chamber; and   doping said flexible film, said semiconductor material or said deposited material with a directed energy beam in a third substantially environmentally controlled processing chamber.   
     
     
       4. The method of claim 3 wherein said depositing step is before said etching step; and said etching step is before said doping step. 
     
     
       5. The method of claim 1 wherein said directed energy beam is an electron beam that scans the semiconductor material. 
     
     
       6. The method of claim 1 wherein said directed energy beam is an ion beam said ion is selected from the group consisting of arsenic, boron, phosphorous or other suitable semiconductor dopants. 
     
     
       7. The method of claim 1 wherein said directed energy beam is an ion beam said ion is selected from the group consisting of C 2  F 6 , CCL 4 , BCl 3  or other suitable semiconductor etchants. 
     
     
       8. A substantially continuous method of manufacturing semiconductor integrated circuits using a continuous loop belt with semiconductor wafer holders mounted thereon to receive semiconductor wafers said method conducted in an environmentally controlled process chamber or a plurality of environmentally controlled process chambers comprising the steps of: positioning a semiconductor wafer in said wafer holder at a loading area;   transferring said semiconductor wafer from said loading area to a process station by movement of the continuous loop belt;   directing an energy beam toward said semiconductor wafer to either remove semiconductor wafer material, add additional material to said semiconductor wafer, or transform a physical property of said semiconductor wafer material at said process station contiguous with said loading area;   transferring said semiconductor wafer away from said process station to an unloading area by movement of the continuous loop belt; and   removing said semiconductor wafer from said wafer holder at said unloading area.   
     
     
       9. The method of claim 8 wherein said directed energy beam is an electron beam that scans said semiconductor wafer. 
     
     
       10. The method of claim 8 wherein said directed energy beam is an ion beam that scans said semiconductor wafer. 
     
     
       11. The method of claim 10 wherein said ion is selected from the group consisting of arsenic, boron, phosphorous, or other suitable semiconductor dopants. 
     
     
       12. The method of claim 10 wherein said ion is selected from the group consisting of C 2  F 6 , CCL 4 , BCl 3  or other suitable semiconductor etchants. 
     
     
       13. The method of claim 8 further comprises the steps of: depositing material on said semiconductor wafer with a directed energy beam in a first environmentally controlled process chamber;   etching said semiconductor wafer or said deposited material with a directed energy beam in a second environmentally controlled processing chamber; and   doping said semiconductor wafer or said deposited material with a directed energy beam in a third substantially environmentally controlled processing chamber.   
     
     
       14. The method of claim 13 wherein said depositing step is before said etching step and said etching step is before said doping step.