Method and apparatus for forming dielectric films

Abstract

Disclosed is a method and apparatus for facilitating the decomposition of organometallic compounds such as TEOS in chemical vapor deposition reactors in order to form deposition films. The method generally includes: (1) introducing an organometallic compound and ozone molecules to a chemical vapor deposition reactor; (2) directing ultraviolet radiation into the chemical vapor deposition reactor to increase the rate at which oxygen atoms are formed from the ozone molecules present in the chemical vapor deposition reactor; and (3) decomposing the organometallic compound to form a deposition layer. The organometallic compound decomposes at an accelerated rate due in part to an increased amount of hydroxyl radicals present in the chemical vapor deposition reactor.

What is claimed is: 
     
       1. A method of facilitating decomposition of an organometallic compound during a chemical vapor deposition reaction conducted with ozone, the method comprising the following steps: introducing said organometallic compound, water vapor, and ozone molecules to a chemical vapor deposition reactor;   directing ultraviolet radiation into said chemical vapor deposition reactor and thereby increasing a rate of forming oxygen atoms from said ozone; and   decomposing the organometallic compound to form a deposition layer, wherein decomposition of said organometallic compound is facilitated by hydroxyl radicals produced from said oxygen atoms and moisture.   
     
     
       2. The method of facilitating decomposition of an organometallic compound as recited in claim 1, further including a step of introducing an inert carrier gas for delivering the organometallic compound to the chemical vapor deposition reactor. 
     
     
       3. The method of facilitating decomposition of an organometallic compound as recited in claim 2, wherein the inert carrier gas is selected from the group consisting of nitrogen, argon and helium. 
     
     
       4. The method of facilitating decomposition of an organometallic compound as recited in claim 3, wherein the concentration of the gaseous nitrogen in the chemical vapor deposition reactor is between about 60 percent and 70 by volume. 
     
     
       5. The method of facilititing decomposition of an organometallic compound as recited in claim 1, further including a substep of heating a substrate on which the deposition layer is formed in the chemical vapor deposition reactor to a temperature of between about 20° C. and 500° C. 
     
     
       6. The method of facilitating decomposition of an organometallic compound as recited in claim 1, wherein the ultraviolet radiation is provided by a mercury arc lamp. 
     
     
       7. The method of facilitating decomposition of an organometallic compound as recited in claim 1, wherein said organometallic compound is selected from the group consisting of TEOS, BPTEOS, TEB, TMOP, OMCTS, HMDS, TMCTS, and TRIES. 
     
     
       8. The method of facilitating decomposition of an organometallic compound as recited in claim 7, wherein the concentration of TEOS in the chemical vapor deposition reactor is between about 0.1 percent and 0.5 percent by volume. 
     
     
       9. The method of facilitating decomposition of an organometallic compound as recited in claim 1, wherein the concentration of ozone in the chemical vapor deposition reactor is between about 1 percent and 5 percent by volume. 
     
     
       10. A method of facilitating decomposition of an organometallic compound during a chemical vapor deposition reaction conducted with ozone, the method comprising the following steps: introducing said organometallic compound, gaseous hydrogen peroxide, and ozone molecules to a chemical vapor deposition reactor;   directing ultraviolet radiation into said chemical vapor deposition reactor and thereby increasing a rate of forming oxygen atoms from said ozone; and   decomposing the organometallic compound to form a deposition layer, wherein decomposition of said organometallic compound is facilitated by hydroxyl radicals produced from said oxygen atoms and moisture.   
     
     
       11. The method of facilitating decomposition of an organometallic compound as recited in claim 10, further including a step of introducing an inert carrier gas for delivering the organometallic compound to the chemical vapor deposition reactor. 
     
     
       12. The method of facilitating decomposition of an organometallic compound as recited in claim 11, wherein the inert carrier gas is selected from the group consisting of nitrogen, argon and helium. 
     
     
       13. The method of facilitating decomposition of an organometallic compound as recited in claim 12, wherein the concentration of the gaseous nitrogen in the chemical vapor deposition reactor is between about 60 percent and 70 by volume. 
     
     
       14. The method of facilitating decomposition of an organometallic compound as recited in claim 10, further including a substep of heating a substrate on which the deposition layer is formed in the chemical vapor deposition reactor to a temperature of between about 20° C. and 500° C. 
     
     
       15. The method of facilitating decomposition of an organometallic compound as recited in claim 10, wherein the ultraviolet radiation is provided by a mercury arc lamp. 
     
     
       16. The method of facilitating decomposition of an organometallic compound as recited in claim 10, wherein said organometallic compound is selected from the group consisting of TEOS, BPTEOS, TEB, TMOP, OMCTS, HMDS, TMCTS, and TRIES. 
     
     
       17. The method of facilitating decomposition of an organometallic compound as recited in claim 16, wherein the concentration of TEOS in the chemical vapor deposition reactor is between about 0.1 percent and 0.5 percent by volume. 
     
     
       18. The method of facilitating decomposition of an organometallic compound as recited in claim 10, wherein the concentration of ozone in the chemical vapor deposition reactor is between about 1 percent and 5 percent by volume.