US5608743AExpiredUtility

Semiconductor light emitting device

50
Assignee: FUJI PHOTO FILM CO LTDPriority: Jul 15, 1994Filed: Jul 14, 1995Granted: Mar 4, 1997
Est. expiryJul 15, 2014(expired)· nominal 20-yr term from priority
Inventors:Toshiro Hayakawa
H01S 5/141H01S 5/065H01S 5/1064H01S 5/20H01S 5/5018H01S 5/5045
50
PatentIndex Score
12
Cited by
8
References
4
Claims

Abstract

A semiconductor light emitting device includes a semiconductor light amplifier, a mirror which reflects light emanating from the rear end face of the semiconductor light amplifier to return the light to the rear end face of the semiconductor light amplifier, and a band pass filter which is inserted into the optical path of the light emanating from the rear end face of the semiconductor light amplifier and has a narrow transmission wavelength band.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A semiconductor light emitting device comprising a semiconductor light amplifier, a mirror which reflects light emanating from one end face of the semiconductor light amplifier to return the light to said on end face of the semiconductor light amplifier, and a band pass filter which is inserted into the optical path of the light emanating from said one end face of the semiconductor light amplifier and has a narrow transmission wavelength band. 
     
     
       2. A semiconductor light emitting device comprising a semiconductor light amplifier,   a mirror which reflects light emanating from one end face of the semiconductor light amplifier to return the light to said one end face of the semiconductor light amplifier,   a band pass filter which is inserted into the optical path of the light emanating from said one end face of the semiconductor light amplifier and has a narrow transmission wavelength band, and   a focusing lens which focuses the light emanating from said one end face of the semiconductor light amplifier and images a light emission near field pattern of said one end face of the semiconductor light amplifier on the mirror.   
     
     
       3. A semiconductor light emitting device as defined in claim 2 in which said the mirror is shaped to selectively,reflect a particular transverse mode component of the light emanating from said one end face of the semiconductor light amplifier. 
     
     
       4. A semiconductor light emitting device as defined in claim 2 or 3 in which a mask which interrupts a part of the light emanating from said one end face of the semiconductor light amplifier and permits only a particular transverse mode component of the light to impinge upon the mirror is provided between the mirror and the semiconductor light amplifier.

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