Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor proccessing

Abstract

An integrated module with a heated reservoir to vaporize liquid for semiconductor processes with liquid sources is presented. Shut-off valves and a proportioning pressure valve for controlling the flow of the vapor from the reservoir are mounted on the module for simple conduction heating of the valves. A capacitance manometer also mounted to the module also has its own heating elements. Condensation of the vapor is avoided and consistence performance and reliability is obtained.

What is claimed is: 
     
       1. A system for delivering chemical vapor from a liquid source for the processing of semiconductor wafers, comprising a processing unit having   a housing defining a processing chamber for semiconductor wafers;   a gas inlet in said housing;   a plurality of gas supply channels in said housing connected to said gas inlet for supplying gas to said processing chamber;   a plurality of vacuum channels for removing gas from said processing chamber; and   a module connected to a liquid source of chemical vapor and to said processing unit, said module having a housing mounted to said processing unit housing, said module housing defining a reservoir for receiving liquid from said liquid source;   means for heating said reservoir to form said chemical vapor from said liquid;   means connected to said gas inlet for delivering said chemical vapor to said gas inlet and said processing chamber;     whereby chemical vapor from said liquid source is delivered to said processing chamber for processing of said semiconductor wafers.   
     
     
       2. The chemical vapor delivering system as in claim 1 wherein said processing chamber is sized and shaped to hold one semiconductor wafer at a time, said semiconductor wafer being generally circular about a center axis and having two opposing major surfaces perpendicular to said center axis, and said gas supply channels open to said processing chamber and interconnected in a circular pattern about said center axis. 
     
     
       3. The chemical vapor delivering system as in claim 2 wherein said housing comprising a first housing plate and a second housing plate, said processing chamber defined between said first and second housing plates with said center axis perpendicular therewith, said gas inlet and gas supply channels in said first housing, said gas inlet connected to said gas supply channels along said center axis. 
     
     
       4. The chemical vapor delivering system as in claim 3 wherein said gas supply channels comprise a plurality of channels radiating from said center axis. 
     
     
       5. The chemical vapor delivering system as in claim 4 wherein said radiating channels have a semicircular cross-sections of approximately 0.25"×0.40". 
     
     
       6. The chemical vapor delivering system as in claim 4 wherein said gas supply channels comprise a plurality of circular channels about said center axis and intersecting said radiating channels. 
     
     
       7. The chemical vapor delivering system as in claim 6 wherein said circular channels are radially spaced approximately 0.75 inches from each other about said center axis. 
     
     
       8. The chemical vapor delivering system as in claim 6 wherein said circular channels have rectangular cross-sections with approximately 3 inch diameters. 
     
     
       9. The chemical vapor delivering system as in claim 4 further comprising a first plate over said gas supply channels, said first plate having a plurality of holes for dispersing gas into processing chamber from said gas supply channels. 
     
     
       10. The chemical vapor delivering system as in claim 9 further comprising a second plate over said first plate, said second plate being porous to gas for dispersing gas into processing chamber from said gas supply channels.