US5505649AExpiredUtility

Field emission display device and method for producing such display device

Assignee: SAMSUNG DISPLAY DEVICES CO LTDPriority: Jul 27, 1994Filed: Dec 29, 1994Granted: Apr 9, 1996
Est. expiryJul 27, 2014(expired)· nominal 20-yr term from priority
Inventors:Nam-Sin Park
H01J 9/025H01J 2201/30457H01J 2329/00H01J 31/10
52
PatentIndex Score
11
Cited by
4
References
3
Claims

Abstract

A field emission display device having thin film diamond cathodes and a method for producing the display device are disclosed. The field emission display device has an insulating layer having circular pattern apertures, and the field emission diamond cathodes formed in the apertures of the insulating layer respectively. The display device is formed by forming an insulating layer on a cathode layer, etching the insulating layer using a photoresist so as to form the apertures in the insulating layer, removing the photoresist from the insulating layer and forming a separation layer on the insulating layer, forming a plurality of thin-film diamond cathodes in the apertures and, at the same time, forming a diamond layer on the separation layer, and removing the separation layer together with the diamond layer from the insulating layer through a lift off process.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A method for producing a field emission display device comprising the steps of: forming a cathode layer on a substrate and forming an insulating layer on said cathode layer;   etching said insulating layer using a photoresist having a predetermined aperture pattern, thus to form a plurality of apertures in said insulating layer;   removing said photoresist from the insulating layer and forming a separation layer on the insulating layer;   forming a plurality of thin film field emission diamond cathodes in said apertures of the insulating layer respectively and, at the same time, forming a diamond layer on the separation layer; and   removing said separation layer together with said diamond layer from the insulating layer through a lift off process.   
     
     
       2. The method according to claim 1, wherein said diamond cathodes are formed in the apertures of the insulating layer respectively through a microwave chemical vapor deposition at a temperature ranged from 400° C. to 700° C. 
     
     
       3. The method according to claim 1, wherein said separation layer is inclination-deposited on the insulating layer using an electron beam vacuum depositor while rotating said glass substrate at an angle of inclination ranged from 10° to 20°.

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