Resin sealed semiconductor integrated circuit device

Abstract

A resin sealed semiconductor integrated circuit device has an upper wiring layer crossing over a lower wiring layer via an intermediate insulating film. Recesses or protrusions are formed at the side face of the upper wiring layer in the vicinity of its intersecting boundary with the lower wiring layer.

What is claimed is: 
     
       1. A resin sealed semiconductor integrated circuit device comprising: a semiconductor substrate;   a first wiring layer formed on said substrate at a first level;   an intermediate insulating film formed on said first wiring layer;   a second wiring layer formed at a second level which is higher above said substrate than said first level, said second wiring layer crossing over said first wiring layer via said intermediate insulating film at one intersecting portion of said second wiring layer, said second wiring layer having a side face;   a protective film covering said second wiring layer; and   a resin sealing material coating said protective film, said first and second wiring layers, said intermediate insulating film and said substrate;   wherein a plurality of recesses are formed on said side face of said second wiring layer at said intersecting portion and at portions of said second wiring layer in the vicinity of said intersecting portion.   
     
     
       2. A resin sealed semiconductor integrated circuit device as claimed in claim 1, wherein the plan shape of said recess is a square. 
     
     
       3. A resin sealed semiconductor integrated circuit device as claimed in claim 1, wherein the plan shape of said recess is a triangle. 
     
     
       4. A resin sealed semiconductor integrated circuit device as claimed in claim 1, wherein the plan shape of said recess is a circular arc. 
     
     
       5. A resin sealed semiconductor integrated circuit device comprising: a semiconductor substrate;   a first wiring layer formed on said substrate at a first level;   an intermediate insulating film formed on said first wiring layer;   a second wiring layer at a second level which is higher above said substrate than said first level, said second wiring layer crossing over said first wiring layer via said intermediate insulating film at an intersecting portion of said second wiring layer, said second wiring layer having a side face;   a protective film covering said second wiring layer; and   a resin sealing material coating said protective film, said first and second wiring layers, said intermediate insulating film and said substrate;   a plurality of protrusions being formed on said side face of said second wiring layer at said intersecting portion and at portions of said second wiring layer in the vicinity of said intersecting portion.   
     
     
       6. A resin sealed semiconductor integrated circuit device as claimed in claim 5, wherein the plan shape of said protrusion is a square. 
     
     
       7. A resin sealed semiconductor integrated circuit device as claimed in claim 5, wherein the plan shape of said protrusion is a triangle. 
     
     
       8. A resin sealed semiconductor integrated circuit device as claimed in claim 5, wherein the plan shape of said protrusion is a circular arc.