Container package for semiconductor element

Abstract

Disclosed is a container package for a semiconductor element, which comprises an insulating vessel having in the interior thereof a space for containing a semiconductor element, which comprises an insulating substrate and a lid member, an external lead terminal for connecting the semiconductor element contained in the vessel to an electric circuit and a sealing agent for sealing the vessel and external lead terminal, wherein the external lead terminal is composed of an electroconductive material having a permeability lower than 210 (CGS), a thermal expansion coefficient of from 5×10 -6 to 12×10 -6 /°C. and an electroconductivity of at least 10% (International Annealed Copper Standard).

We claim: 
     
       1. A container package for a semiconductor element, which comprises an insulating vessel having in the interior thereof a space for containing a semiconductor element, which comprises an insulating substrate and a lid member, an external lead terminal for connecting the semiconductor element contained in the vessel to an electric circuit and a sealing agent for sealing the vessel and external lead terminal, wherein the external lead terminal is composed of an electroconductive material having a permeability less than 210 (CGS), a thermal expansion coefficient of from 5×10 -6  to 12×10 -6  /°C., and an electroconductivity of at least 10%. 
     
     
       2. A semiconductor element container package as set forth in claim 1, wherein the external lead terminal is composed of a metal body comprising a core composed of copper, the outer surface of which is cladded with a cladding layer composed of an alloy comprising 24.5 to 25.5% by weight of nickel and 74.5 to 75.5% by weight of iron, the sectional area of the cladding layer being 1.5 to 12 times as large as the sectional area of the core. 
     
     
       3. A semiconductor element container package as set forth in claim 1, wherein the external terminal is composed of a metal body formed by bonding a copper plate to upper and lower faces of a plate member composed of an invar alloy. the thickness of the copper plate being substantially the same as the thickness of the plate member. 
     
     
       4. A package as set forth in any of claims 1, 2 or 3, wherein the substrate and lid member are composed of a forsterite sintered body or a zirconia sintered body. 
     
     
       5. A package as set forth in claim 4, wherein the sintered body has a thermal expansion coefficient of from 95×10 -7  to 110×10 -7  /°C. 
     
     
       6. A semiconductor element container package as set forth in claim 4, wherein the sealing agent consists of a glass formed by adding up to 15% by volume of at least one member selected from the group consisting of lead titanate, β-eucryptite, cordierite, zircon, tin oxide, willemite and tin titanate as a filler to a glass component comprising 70.0 to 90.0% by weight of lead oxide, 10.0 to 15.0% by weight of boron oxide, 0.5 to 3.0% by weight of silica, 0.5 to 3.0% by weight of alumina and up to 3.0% by weight of zinc oxide and bismuth oxide. 
     
     
       7. A semiconductor element container package as set forth in claim 4, wherein the sealing agent consists of a glass comprising 30.0 to 60.0% by weight of silica, 20.0 to 40.0% by weight of lead oxide and 10.0 to 20.0% by weight of at least one member selected from the group consisting of oxides of sodium and potassium. 
     
     
       8. A semiconductor element container package as set forth in claim 4, wherein the sealing agent consists of a glass comprising 60.0 to 70.0% by weight of silica, 10.0 to 20.0% by weight of at least one member selected from the group consisting of oxides of sodium and potassium and 5.0 to 15.0% by weight of barium oxide. 
     
     
       9. A semiconductor element container package as set forth in claim 1, wherein the external lead terminal is composed of a metal body formed by cladding the outer surface of a core composed of copper with a cladding layer composed of an alloy comprising 28.5 to 29.5% by weight of nickel, 15.5 to 16.5% by weight of cobalt and 54.0 to 56.0% by weight of iron so that the sectional area of the cladding layer is 7.2 to 8.8 times as large as the sectional area of the core. 
     
     
       10. A semiconductor element container package as set forth in claim 1, wherein the external lead terminal is composed of a metal body formed by bonding a copper plate to upper and lower surfaces of a plate member composed of an alloy comprising 28.5 to 29.5% by weight of nickel, 15.5 to 16.5% by weight of cobalt and 54.0 to 56.0% by weight of iron, the thickness of the copper plate being 10 to 20% of the thickness of the plate member. 
     
     
       11. A package as set forth in any of claims 1, 9 and 10, wherein the insulating substrate and lid member is composed of at least one member selected from an aluminum nitride sintered body, a mullite sintered body and a zircon sintered body. 
     
     
       12. A package as set forth in claim 11, wherein the sintered body has a thermal expansion coefficient of from 40×10 -7  to 50×10 -7  /°C. 
     
     
       13. A semiconductor container package as set forth in claim 11, wherein the sealing agent consists of a glass comprising 65.0 to 80.0% by weight of silica, 10.0 to 25.0% by weight of boron oxide, 1.0 to 10.0% by weight of alumina and 1.0 to 10.0% by weight of at least one member selected from oxides of sodium and potassium. 
     
     
       14. A semiconductor element container package as set forth in claim 11, wherein the sealing agent consists of a glass formed by adding 30.0 to 50.0% by volume of at least member selected from the group consisting of lead titanate, β-eucryptite, cordierite, zircon, tin oxide, willemite and tin titanate as a filler to a glass component comprising 70.0 to 90.0% by weight of lead oxide, 10.0 to 15.0% by weight of boron oxide, 0.5 to 3.0% by weight of silica, 0.5 to 3.0% by weight of alumina and up to 3.0% by weight of zinc oxide and bismuth oxide. 
     
     
       15. A semiconductor element container package as set forth in claim 11, wherein the sealing agent consists of a glass comprising 55.0 to 65.0% by weight of zinc oxide, 15.0 to 25.0% by weight of boron oxide and 10.0 to 15.0% by weight of silica. 
     
     
       16. A semiconductor element container package as set forth in claim 1, wherein the external lead terminal is composed of a metal body formed by bonding a copper plate to upper and lower surfaces of a plate member composed of an alloy comprising 31.5 to 32.5% by weight of nickel, 16.5 to 17.5% by weight of cobalt and 50.0 to 52.0% by weight of iron, the thickness of the copper plate being 60 to 80% of the thickness of the plate member. 
     
     
       17. A semiconductor element container package as set forth in claim 1, wherein the external lead terminal is composed of a metal body formed by bonding a thin plate composed of an alloy comprising 31.5 to 32.5% by weight of nickel, 16.5 to 17.5% by weight of cobalt and 50.0 to 52.0% by weight of iron to upper and lower faces of a plate member composed of copper, the thickness of the thin plate being 30 to 40% of the thickness of the plate member. 
     
     
       18. A semiconductor element container package as set forth in claim 1, wherein the external lead terminal is composed of a metal body formed by bonding a plate composed of copper to upper and lower faces of a plate member composed of an invar alloy, the thickness of the copper plate being 40 to 60% of the thickness of the plate member. 
     
     
       19. A package as set forth in any of claims 1, 16, 17 and 18, wherein the insulating substrate and lid member are composed of a spinel sintered body or a steatite sintered body. 
     
     
       20. A package as set forth in claim 19, wherein the sintered body has a thermal expansion coefficient of from 70×10 -7  to 85×10 -7  /°C. 
     
     
       21. A semiconductor container package as set forth in claim 19, wherein the sealing agent consists of a glass formed by adding 15 to 30% by volume of at least one member selected from the group consisting of lead titanate, β-eucryptite, cordierite, zircon, tin oxide, willemite and tin titanate as a filler to a glass component comprising 70.0 to 90.0% by weight of lead oxide, 10.0 to 15.0% by weight of boron oxide, 0.5 to 3.0% by weight of silica, 0.5 to 3.0% by weight of alumina and up to 3.0% by weight of zinc oxide and bismuth-oxide. 
     
     
       22. A semiconductor element container package as set forth in claim 19, wherein the sealing agent consists of a glass comprising 55.0 to 75.0% by weight of silica, 10.0 to 20.0% by weight of at least one member selected from the group consisting of oxides of sodium and potassium and 20.0 to 40.0% by weight of lead oxide. 
     
     
       23. A semiconductor element container package as set forth in claim 19, wherein the sealing agent is composed of a glass comprising 30.0 to 50.0% by weight of silica, 10.0 to 30.0% by weight of lead oxide, 5.0 to 15.0% by weight of boron oxide, 5.0 to 15.0% by weight of barium oxide, 5.0 to 10.0% by weight of bismuth oxide, 1.0 to 10.0% by weight of alumina and up to 10.0% by weight of calcia. 
     
     
       24. A semiconductor element container package as set forth in claim 19, wherein the sealing agent is composed of a glass comprising 60.0 to 80.0% by weight of lead oxide, 5.0 to 20.0% by weight of boron oxide, 5.0 to 20.0% by weight of zinc oxide, 1.0 to 10.0% by weight of silica and 1.0 to 10.0% by weight of alumina. 
     
     
       25. A semiconductor element container package as set forth in claim 1, wherein the external lead terminal is composed of a metal body formed by bonding a copper plate to upper and lower faces of a plate member composed of an alloy comprising 31.5 to 32.5% by weight of nickel, 16.5 to 17.5% by weight of cobalt and 50.0 to 52.0% by weight of iron, the thickness of the copper plate being 60 to 80% of the thickness of the plate member. 
     
     
       26. A semiconductor element container package as set forth in claim 1, wherein the external lead terminal is composed of a metal body formed by bonding a thin plate composed of an alloy comprising 31.5 to 32.5% by weight of nickel, 16.5 to 17.5% by weight of cobalt and 50.0 to 52.0% by weight of iron to upper and lower faces of a plate member composed of copper, the thickness of the thin plate being 30 to 40% of rhe thickness of the plate member. 
     
     
       27. A package as set forth in any of claims 1, 25 and 26, wherein the insulating substrate and lid member are composed of an aluminum oxide sintered body. 
     
     
       28. A package as set forth in claim 27, wherein the sintered body has a thermal expansion coefficient of from 65×10 -7  to 75×10 -7  /°C. 
     
     
       29. A semiconductor element container package as set forth in claim 27, wherein the sealing agent consists of a glass formed by adding 20 to 40% by volume of at least one member selected from the group consisting of lead titanate, β-eucryptite, cordierite, zircon, tin oxide, willemite and tin titanate as a filler to a glass component comprising 70.0 to 90.0% by weignt of lead oxide, 10.0 to 15.0% by weight of boron oxide, 0.5 to 3.0% by weight of silica, 0.5 to 3.0% by weight of alumina and up to 3.0% by weight of zinc oxide and bismuth oxide. 
     
     
       30. A semiconductor element container package as set forth in claim 27, wherein the sealing agent is composed of a glass comprising 30.0 to 50.0% by weight of silica, 10.0 to 30.0% by weight of lead oxide, 5.0 to 15.0% by weight of boron oxide, 5.0% to 15.0% by weight of barium oxide, 5.0 to 10.0% by weight of bismuth oxide, 1.0 to 10.0% by weight of aumina and up to 10.0% by weight of calcia. 
     
     
       31. A semiconductor element container package as set forth in claim 27, wherein the sintering agent is composed of a glass comprising 60.0 to 80.0% by weight of lead oxide, 5.0 to 20.0% by weight of boron oxide, 5.0 to 20.0% by weight of zinc oxide, 1.0 to 10.0% by weight of silica and 1.0 to 10.0% by weight of alumina.