Non-single-cry stal semiconductor light emitting device

Abstract

A non-single-crystal semiconductor light emitting device comprising a first electrode, a first conductiveity type non-single-crystal semiconductor layer formed on the first electrode, a non-single-crystal semiconductor region formed on the first non-single-crystal semiconductor layer, a second conductivity type non-single-crystal semiconductor layer formed on the nonsingle-crystal semiconductor region, and a second electrode formed on the second non-single-crystal semiconductor layer. The non-single-crystal semiconductor region is formed by a third non-single-crystal semiconductor layer or a laminate member made up of a plurality m (where m≧3) of non-single-crystal semiconductor layers M 1 , M 2 , . . . M m . The third non-single-crystal semiconductor layer and even-numbered non-single-crystal semiconductor layer M i (i=2, 4, . . . (m-1) are formed of silicon and so doped with hydrogen or fluorine in an amount of more than 30 atom % as to provide it an (SiH 2 ) n or (SiF 2 ) n structure. The odd-numbered non-single-crystal semiconductor layers M.sub.(i-1) and M.sub.(i+1) have larger energy band gaps than does the even-numbered non-single-crystal semiconductor layer M i .

What is claimed is: 
     
       1. A non-single-crystal semiconductor light emitting device comprising: a first electrode;   a first conductivity type non-single-crystal semiconductor layer formed on the first electrode and making ohmic contact therewith;   an intrinsic non-single-crystal semiconductor region formed on the first conductivity type non-single-crystal semiconductor layer;   a second conductivity type non-single-crystal semiconductor layer formed on the intrinsic non-single-crystal semiconductor region; and   a second electrode formed on the second conductivity type non-single-crystal semiconductor layer and making ohmic contact therewith;   wherein the intrinsic non-single-crystal semiconductor region is formed by at least one intrinsic non-single-crystal semiconductor layer, the intrinsic non-single crystal layer being formed of silicon and doped with hydrogen or fluorine to provide therein an (SiH 2 ) n  or (SiF 2 ) n  structure in which SiH 2  or SiF 2  structures, each having two hydrogen or fluorine atoms combined with two bonds of the one silicon atom, are linked as a chain, and to have an energy gap of 2.2 to 2.7 eV; and   wherein either one of the first and second electrodes is light transparent.   
     
     
       2. A non-single-crystal semiconductor light emitting device according to claim 1, wherein the intrinsic non-single-crystal semiconductor layer of the non-single-crystal semiconductor region is doped with hydrogen or fluorine in an amount of more than 30 atom %. 
     
     
       3. A non-single-crystal semiconductor light emitting device according to claim 1, wherein the side surface of the non-single-crystal semiconductor region is covered with a protective insulating layer. 
     
     
       4. A non-single-crystal semiconductor light emitting device according to claim 1, wherein the intrinsic non-single-crystal semiconductor layer of the non-single-crystal semiconductor region is in contact with the first and second conductivity type non-single-crystal semiconductor layers. 
     
     
       5. A non-single-crystal semiconductor light emitting device according to claim 1, wherein the other one of the first and second electrode is reflective. 
     
     
       6. A non-single-crystal semiconductor light emitting device comprising: a first electrode;   a first conductivity type non-single-crystal semiconductor layer formed on the first electrode and making ohmic contact therewith;   an intrinsic non-single-crystal semiconductor region formed on the first conductivity type non-single-crystal semiconductor layer;   a second conductivity type non-single-crystal semiconductor layer formed on the intrinsic non-single-crystal semiconductor region; and   a second electrode formed on the second conductivity type non-single-crystal semiconductor layer and making ohmic contact therewith;   wherein the intrinsic non-single-crystal semiconductor region is formed by a non-single-crystal semiconductor laminate member made up of a plurality m (where m≧3) of intrinsic non-single-crystal semiconductor layers M 1 , M 2 , . . . M m  sequentially laminate in this order,   wherein the even-numbered intrinsic non-single-crystal semiconductor layer M i  (where i=2, 4, . . . (m-1)) of the non-single-crystal semiconductor region is formed of silicon and doped with hydrogen or fluorine to provide therein an (SiH 2 ) n  or (SiF 2 ) n  structure in which SiH 2  or SiF 2  structures, each having two hydrogen or fluorine atoms combined with two bonds of the one silicon atom, are linked as a chain, and to have an energy gap Egi of 2.2 to 2.7 eV;   wherein the odd-numbered intrinsic non-single-crystal semiconductor layer M j  (where j=1, 3. . . m) of the non-single-crystal semiconductor region is formed of silicon carbide, silicon nitride, or silicon oxide and has energy gap Egj of 2.3 to 3.5 eV;   wherein the energy gaps Eg 1 , Eg 2 , . . . and Eg m  of the intrinsic non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m  bear such relationships as Eg 1  >Eg 2  <Eg 3 , Eg 3  >Eg 4  <Eg 5 , . . . Eg.sub.(m-2) >Eg.sub.(m-1) <Eg m  ; and   wherein either one of the first and second electrodes is light transparent.   
     
     
       7. A non-single crystal according to claim 6, wherein the intrinsic non-crystal layer Mi of the non-crystal region is doped with hydrogen or fluorine in an amount of more than 30 atom %. 
     
     
       8. A non-single-crystal semiconductor light emitting device according to claim 6, wherein the side surface of the non-single-crystal semiconductor region is covered with a protective insulating layer. 
     
     
       9. A non-single-crystal semiconductor light emitting device according to claim 6, wherein the number m is three, and the non-single-crystal semiconductor layer M 3  is formed to extend over the side surface of the non-single-crystal semiconductor layer M 2  to protect it. 
     
     
       10. A non-single-crystal semiconductor light emitting device according to claim 6, wherein the other one of the first and second electrodes is reflective.