Semiconductor device having overload protection

Abstract

The transistor includes a semiconductor body having a surface on which are disposed metallic connection contact areas, including means for protection from overloads. At least one of the metallic area comprises a material, such as Al, susceptible to forming a eutectic with the substrate, which is made, for example, of Si. The metallic area is formed from an alloy of the material, such as the Al-Si eutectic, having a melting point whose temperature is lower than the formation temperature of the Al-Si eutectic and higher than the temperature of soldering the semiconductor body on a support.

What is claimed is: 
     
       1. A semiconductor device comprising a support, a semiconductor body soldered on said support and comprising a surface, metallic connection contact areas on said surface, at least one contact wire connected to one of said contact areas, and means for protecting said device from overloads, at least one of said metallic areas comprising a material capable of forming a eutectic with the semiconductor body formed from an alloy of said material having a melting point whose temperature is lower than the temperature of formation of said eutectic and higher than the temperature of soldering the semiconductor body on its support so that said at least one metallic area will melt prior to the formation of said eutectic upon overload of said device. 
     
     
       2. A device as claimed in claim 1, characterized in that said alloy comprises an aluminum-germanium eutectic. 
     
     
       3. A device as claimed in claim 2, characterized in that said alloy comprises at least one element of the group consisting of magnesium and antimony. 
     
     
       4. A device as claimed in claim 1, characterized in that said alloy comprises an aluminum-zinc eutectic. 
     
     
       5. A device as claimed in claim 1, characterized in that the said alloy comprises an aluminum-magnesium eutectic. 
     
     
       6. A device as claimed in claim 1 or 2, characterized in that at least said metallic area comprises a subjacent layer of aluminum having a substantially smaller thickness than that of said metallic area. 
     
     
       7. A device as claimed in claim 1 or 2, characterized in that at least said metallic area is coated with a layer of aluminum having a substantially smaller thickness than that of said metallic area. 
     
     
       8. A device as claimed in claim 1 or 2, wherein said device is a power transistor.