Controlled power-semiconductor component having an annular cage

Abstract

Controlled power semiconductor component, having a disc-shaped silicon body with a surface on each side thereof, two insulated ductile electrodes each having surfaces on each side thereof, one of the surfaces of each of the ductile electrodes being in pressure contact with one of the surfaces of the silicon body, two pressure-contact discs each having an edge, and a surface on one side thereof in pressure contact with the other of the surfaces of the ductile electrodes, at least one control electrode connection disposed at a respective ductile electrode and contact disc on one of the sides of the silicon body, a bipartite annular cage divided along its diameter and having two polygonal recesses formed therein forming polygonal surfaces on the cage, and two inner flanges integral with the cage and bordering the recesses the flanges being disposed one above the other in axial direction of the silicon body, the polygonal surfaces on the cage formed by the recesses being tensionally connected to the edges of the contact discs.

There are claimed: 
     
       1. Controlled power semiconductor component, comprising a disc-shaped silicon body having a surface on each side thereof, two insulated ductile electrodes each having surfaces on each side thereof, one of said surfaces of each of said ductile electrodes being in pressure contact with one of said surfaces of said silicon body, two pressure-contact discs formed of one of the group consisting of molybdenum and tungsten each having an edge, and a surface on one side thereof in pressure contact with the other of said surfaces of said ductile electrodes, at least one control electrode connection being electrically insulated from and conducted through a respective ductile electrode and contact disc on one of said sides of said silicon body, a flat annular cage formed of insulating material for insertion in a housing centralizing said silicon body and contact discs, said cage having two circular disc-shaped flanges being disposed one above the other in axial direction of said silicon body and a hollow cylindrical middle portion connecting said flanges to each other forming a single piece, each of said flanges having internal polygonal recesses formed therein forming polygonal surfaces being tensionally connected to said edges of said contact discs, said cage being divided into two parts along the diameter thereof. 
     
     
       2. Semiconductor component according to claim 1, wherein said polygonal recesses are hexagonal and said cage is divided between two corners of said hexagonal recesses. 
     
     
       3. Semiconductor component according to claim 1, wherein said cage has an outer surface having a groove formed therein and a clamping ring disposed in said groove. 
     
     
       4. Semiconductor component according to claim 1, wherein said cage is formed of polysulfon. 
     
     
       5. Semiconductor component according to claim 1, wherein said ductile electrodes are cup-shaped and are pushed upside down over said contact discs, and including silicon rubber elastically securing said ductile electrodes to said silicon body. 
     
     
       6. Semiconductor component according to claim 1, wherein said cage is in the form of a measuring adapter for fixing said silicon body for electrical measurements. 
     
     
       7. Semiconductor component according to claim 7, including an insulating case surrounding said cage through which the measurements may be taken. 
     
     
       8. Semiconductor component according to claim 8, including pressure bodies disposed on the other side of said contact discs and metallic ring parts connected between said contact discs and said insulating case. 
     
     
       9. Semiconductor component according to claim 1 or 2, including engagement means for connecting said parts of said cage together.