Platinum silicide fuse links for integrated circuit devices

Abstract

Selected circuit elements and interconnections of a integrated circuit device are connected by platinum silicide fuse links which open when electrical power exceeds a threshold amount. The fuse is constructed by defining the fuse geometry in a polycrystalline silicon layer over a wafer substrate, depositing a layer of platinum thereover and then sintering the platinum into the polysilicon.

I claim: 
     
       1. A semiconductor integrated circuit comprising, a semiconductor integrated circuit,   a plurality of spaced apart metal interconnection means integrated into said integrated circuit for linking circuit elements in said semiconductor integrated circuit, and   at least one metal silicide fuse link integrated into said integrated circuit having a generally elongated shape with opposite ends electrically connected to two selected of said metal interconnections, said fuse link having a cross sectional dimension which will electrically open by application of electrical power greater than a preselected threshold power.   
     
     
       2. The apparatus of claim 1 wherein said metal silicide fuse link is platinum silicide. 
     
     
       3. In an integrated circuit article of manufacture including a substrate and a plurality of circuit elements, and insulation formed on said substrate, the improvement comprising, a plurality of spaced apart metal interconnections forming part of an integrated circuit and   at least one fuse link integrated into said integrated circuit having a generally elongated shape with opposite ends electrically connected to two selected of said metal interconnections, said fuse link made of platinum silicide with a minimum cross sectional dimension which will electrically open by application of electrical power greater than a preselected threshold power.   
     
     
       4. The apparatus of claim 3 wherein said platinum silicide fuse link is made of polycrystalline silicon reacted with platinum which is disposed over said polycrystalline silicon, said spaced apart metal interconnections being disposed over said reacted polycrystalline silicon.