Substrate processing apparatus, substrate processing method, and method of fabricating semiconductor device

Abstract

A substrate processing apparatus, a substrate processing method, and a method of fabricating a semiconductor device are provided. The substrate processing method includes providing a process gas, generating a preliminary etchant, which includes a first etchant and a second etchant, from the process gas through plasma ignition, generating a process etchant by controlling a composition ratio of the preliminary etchant, and performing a selective etching of the substrate with the process etchant.

What is claimed is: 
     
         1 . A substrate processing apparatus comprising:
 the second etchant being different from the first etchant, which are generated from the plasma, onto a substrate,   
     
     
         2 . The substrate processing apparatus of  claim 1 , wherein the ratio of the first etchant to the second etchant is controlled by surface conditions of the shower head. 
     
     
         3 . The substrate processing apparatus of  claim 2 , further comprising a temperature controller controlling a temperature of the process etchant, wherein the temperature controller is on a sidewall of the shower head. 
     
     
         4 . The substrate processing apparatus of  claim 1 , wherein the ratio of the first etchant to the second etchant is controlled by a dummy substrate provided in the chamber body. 
     
     
         5 . The substrate processing apparatus of  claim 1 , further comprising a gas analyzer connected to the chamber body to measure the ratio of the first etchant to the second etchant. 
     
     
         6 . The substrate processing apparatus of  claim 5 , wherein the gas analyzer is a residual gas analyzer (RGA) connected between the chamber body and a vacuum pump. 
     
     
         7 . A substrate processing apparatus comprising:
 ss gas to produce a first etchant and a second etchant, the second etchant being different from the first etchant;   of measurement from the gas analyzer.   
     
     
         8 . The substrate processing apparatus of  claim 7 , wherein the controller adjusts radio-frequency power applied to the plasma generator to change the ratio of the first etchant to the second etchant. 
     
     
         9 . The substrate processing apparatus of  claim 7 , wherein the controller adjusts a flow rate of the process gas supplied into the chamber body. 
     
     
         10 . The substrate processing apparatus of  claim 7 , wherein the controller controls a pressure inside the chamber body to maintain a target etchant ratio. 
     
     
         11 . The substrate processing apparatus of  claim 7 , wherein the controller adjusts a temperature of a surface of the shower head based on a measured ratio of the first etchant to the second etchant. 
     
     
         12 . The substrate processing apparatus of  claim 7 , wherein the gas analyzer is configured to measure a fluorine-radical-to-fluorine-molecule (F*/F 2 ) ratio in real time. 
     
     
         13 . The substrate processing apparatus of  claim 7 , further comprising a data-storage module recording a temporal change of the measured composition ratio. 
     
     
         14 . A substrate processing apparatus comprising:
 the second etchant being different from the first etchant; and   
     
     
         15 . The substrate processing apparatus of  claim 14 , wherein the temperature controller maintains the shower head at a temperature between 50° C. and 200° C. 
     
     
         16 . The substrate processing apparatus of  claim 14 , wherein the temperature controller is disposed on a sidewall of the shower head. 
     
     
         17 . The substrate processing apparatus of  claim 14 , further comprising a second temperature controller disposed in a lower electrode plate to control a temperature of the lower electrode plate. 
     
     
         18 . The substrate processing apparatus of  claim 14 , wherein the second etchant comprises fluorine molecules generated by recombination of fluorine radicals. 
     
     
         19 . The substrate processing apparatus of  claim 14 , wherein a generation rate of fluorine molecules is maximized when the shower head is maintained at 90° C. to 110° C. 
     
     
         20 . The substrate processing apparatus of  claim 14 , wherein the temperature controller is a ring-shaped heater disposed adjacent to a top portion of a liner of the chamber body.