US2026070184A1PendingUtilityA1

Chemical mechanical polishing (cmp) pad and manufacturing method thereof

Assignee: NANYA TECHNOLOGY CORPPriority: Sep 9, 2024Filed: Sep 9, 2024Published: Mar 12, 2026
Est. expirySep 9, 2044(~18.1 yrs left)· nominal 20-yr term from priority
B24B 37/26
60
PatentIndex Score
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Cited by
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Claims

Abstract

A chemical mechanical polishing (CMP) pad includes a pad body. The pad body has a polishing surface and a plurality of inner surfaces respectively connected with the polishing surface. The inner surfaces are separated from each other and respectively surround to define a columnar hole. The polishing surface is configured to polish against a workpiece. The columnar holes are configured to accommodate a polishing slurry.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A chemical mechanical polishing (CMP) pad, comprising:
 a pad body having a polishing surface and a plurality of inner surfaces respectively connected with the polishing surface, the inner surfaces being separated from each other and respectively surrounding to define a columnar hole, the polishing surface being configured to polish against a workpiece, the columnar holes being configured to accommodate a polishing slurry.   
     
     
         2 . The chemical mechanical polishing pad of  claim 1 , wherein each of the inner surfaces is flat along a normal direction of the polishing surface. 
     
     
         3 . The chemical mechanical polishing pad of  claim 1 , wherein each of the columnar holes has a width parallel with the polishing surface and a length perpendicular to the polishing surface, the length is larger than the width. 
     
     
         4 . The chemical mechanical polishing pad of  claim 3 , wherein each of the widths is constant along a corresponding one of the lengths. 
     
     
         5 . The chemical mechanical polishing pad of  claim 3 , wherein at least two of the widths are same as each other. 
     
     
         6 . The chemical mechanical polishing pad of  claim 3 , wherein at least two of the widths are different from each other. 
     
     
         7 . The chemical mechanical polishing pad of  claim 3 , wherein at least two of the lengths are same as each other. 
     
     
         8 . The chemical mechanical polishing pad of  claim 3 , wherein at least two of the lengths are different from each other. 
     
     
         9 . The chemical mechanical polishing pad of  claim 3 , wherein the pad body has a thickness, the thickness is larger than the lengths. 
     
     
         10 . The chemical mechanical polishing pad of  claim 1 , wherein the columnar holes are evenly distributed on the polishing surface. 
     
     
         11 . The chemical mechanical polishing pad of  claim 1 , wherein the columnar holes are unevenly distributed on the polishing surface. 
     
     
         12 . The chemical mechanical polishing pad of  claim 1 , wherein each of the inner surfaces surrounds to form a shape, at least two of the shapes are same as each other. 
     
     
         13 . The chemical mechanical polishing pad of  claim 1 , wherein each of the inner surfaces surrounds to form a shape, at least two of the shapes are different from each other. 
     
     
         14 . A manufacturing method of chemical mechanical polishing (CMP) pad, comprising:
 providing a pad body with a polishing surface; and   forming a plurality of columnar holes on the polishing surface.   
     
     
         15 . The method of  claim 14 , wherein forming the columnar holes comprises:
 applying air shower on the polishing surface.   
     
     
         16 . The method of  claim 14 , wherein forming the columnar holes comprises:
 piercing on the polishing surface.   
     
     
         17 . The method of  claim 14 , wherein forming the columnar holes comprises:
 inserting a plurality of nanometric needles into the polishing surface.   
     
     
         18 . The method of  claim 14 , wherein forming the columnar holes comprises:
 applying lithography and etching on the polishing surface.

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