Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device according to the present embodiment includes a structural body and a light blocker. At a measurement site that is irradiated with measurement light to measure a structure of the structural body, the light blocker is provided at a position farther than the structural body in an advancing direction of the measurement light with which irradiation is performed, and the light blocker blocks the measurement light. The light blocker includes first metal layers in two or more layers.

1 . A semiconductor device comprising:
 a structural body; and   a light blocker provided at a measurement site that is irradiated with measurement light to measure a structure of the structural body, the light blocker being provided at a position farther than the structural body in an advancing direction of the measurement light with which irradiation is performed, and being configured to block the measurement light, wherein   the light blocker includes first metal layers in two or more layers.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein a total thickness of the first metal layers in two or more layers is 80 nm or more over an entire light blocker in the measurement site. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the first metal layers in two or more layers contain at least one of Cu, W, Mo, Co, Al, Ru, Ti, or Ta. 
     
     
         4 . The semiconductor device according to  claim 1 , further comprising a substrate above which the structural body and the light blocker are provided, wherein
 the first metal layers in two or more layers have repeated patterns in either one of a first direction or a second direction, or in both the first direction and the second direction, the first direction and the second direction being substantially parallel to the substrate and being perpendicular to each other.   
     
     
         5 . The semiconductor device according to  claim 4 , wherein a least common multiple of pitches of the repeated patterns in the first metal layers in two or more layers is four times or less of a largest pitch. 
     
     
         6 . The semiconductor device according to  claim 4 , wherein a least common multiple of pitches of the repeated patterns in the first metal layers in two or more layers is 5 μm or less. 
     
     
         7 . The semiconductor device according to  claim 1 , wherein the structural body includes a second metal layer having a predetermined pattern, and
 the light blocker is provided at a position farther than the second metal layer in the advancing direction of the measurement light with which irradiation is performed.   
     
     
         8 . The semiconductor device according to  claim 7 , further comprising a substrate above which the structural body and the light blocker are provided, wherein
 the first metal layers in two or more layers and the second metal layer have repeated patterns in either one of a first direction or a second direction, or in both the first direction and the second direction, the first direction and the second direction being substantially parallel to the substrate, and being perpendicular to each other.   
     
     
         9 . The semiconductor device according to  claim 8 , wherein a least common multiple of pitches of the repeated patterns in the first metal layers in two or more layers and the second metal layer is four times or less of a largest pitch. 
     
     
         10 . The semiconductor device according to  claim 8 , wherein a least common multiple of pitches of the repeated patterns in the first metal layers in two or more layers and the second metal layer is 5 μm or less. 
     
     
         11 . The semiconductor device according to  claim 1 , further comprising:
 a substrate above which the structural body and the light blocker are provided; and   a film provided between the light blocker and the substrate, the film having a thickness of 2.5 μm or more and having light transmission property.   
     
     
         12 . The semiconductor device according to  claim 1 , further comprising:
 a substrate above which the structural body and the light blocker are provided; and   a stack provided between the light blocker and the substrate, the stack including fifty or more layers of laminated films having light transmission property.   
     
     
         13 . The semiconductor device according to  claim 1 , further comprising:
 a substrate above which the structural body and the light blocker are provided; and   a third metal layer provided between the light blocker and the substrate, the third metal layer being in at least one layer.   
     
     
         14 . The semiconductor device according to  claim 1 , wherein the measurement site is disposed in a scribe line. 
     
     
         15 . The semiconductor device according to  claim 1 , further comprising a semiconductor element disposed in a device region that is different from the measurement site, wherein
 the semiconductor element includes
 a memory cell array including a plurality of conductive layers and a plurality of insulation layers which are alternately laminated, and 
   a plurality of columns that penetrate through the memory cell array.   
     
     
         16 . The semiconductor device according to  claim 1 , further comprising metal layers in two or more layers in a device region that is different from the measurement site, the metal layers in two or more layers being provided at same heights as and made of same materials as the first metal layers in two or more layers in the measurement site. 
     
     
         17 . The semiconductor device according to  claim 1 , wherein the first metal layers in two or more layers respectively contain different metal materials of two or more kinds. 
     
     
         18 . A method for manufacturing a semiconductor device including a structural body, and a light blocker provided at a measurement site that is irradiated with measurement light to measure a structure of the structural body, the light blocker being provided at a position farther than the structural body in an advancing direction of the measurement light with which irradiation is performed, the light blocker including first metal layers in two or more layers, the method comprising
 measuring the structure of the structural body at the measurement site.   
     
     
         19 . The method for manufacturing a semiconductor device according to  claim 18 , wherein the measuring the structure of the structural body includes measuring the structure of the structural body by an optical interference type film thickness measurement method, by spectroscopic ellipsometry, or by an optical critical dimension (OCD) method. 
     
     
         20 . The method for manufacturing a semiconductor device according to  claim 18 , further comprising, before the measuring the structure of the structural body, polishing the structural body, or
 further comprising, before the measuring the structure of the structural body,
 measuring the structure of the structural body before being polished, and 
 polishing the structural body. 
   
     
     
         21 . The method for manufacturing a semiconductor device according to  claim 18 , wherein
 the semiconductor device further includes a semiconductor element disposed in a device region that is different from the measurement site, and   the semiconductor element includes
 a memory cell array including a plurality of conductive layers and a plurality of insulation layers which are alternately laminated, and 
 a plurality of columns that penetrate through the memory cell array.