Method of using solid carbon dioxide to rough surface

Abstract

The present disclosure provides a method of using solid carbon dioxide to roughen a surface. The method includes the following operations. Solid carbon dioxide is generated. Generating the solid carbon dioxide includes directing carbon dioxide from a gas cylinder to pass through a cooled nozzle to enter a vacuum chamber, in which the solid carbon dioxide is formed after the carbon dioxide passes through the cooled nozzle, and a velocity of the solid carbon dioxide exiting from the cooled nozzle is from 1000 m/s to 3000 m/s. The cooled nozzle is moved continuously and substantially horizontally above a surface of a substrate in the vacuum chamber to bump the surface of the substrate with the solid carbon dioxide to form a rough surface of the substrate.

What is claimed is: 
     
         1 . A method of using solid carbon dioxide to roughen a surface, comprising: 
 generating solid carbon dioxide, comprising directing carbon dioxide from a gas cylinder to pass through a cooled nozzle to enter a vacuum chamber, in which the solid carbon dioxide is formed after the carbon dioxide passes through the cooled nozzle, and a velocity of the solid carbon dioxide exiting from the cooled nozzle is from 1000 m/s to 3000 m/s; and   continuously and substantially horizontally moving the cooled nozzle above a surface of a substrate in the vacuum chamber to bump the surface of the substrate with the solid carbon dioxide to form a rough surface of the substrate.   
     
     
         2 . The method of  claim 1 , wherein the substrate comprises silicon oxide, silicon nitride, metal, or combinations thereof.  
     
     
         3 . The method of  claim 1 , wherein an average particle size of the solid carbon dioxide is from 3 nm to 300 nm. 
     
     
         4 . The method of  claim 1 , wherein an average depth of holes on the rough surface of the substrate is from 5 nm to 2000 nm. 
     
     
         5 . The method of  claim 1 , wherein when generating the solid carbon dioxide, a gas carbon dioxide is exited from the cooled nozzle along with the solid carbon dioxide, and a molar ratio of the solid carbon dioxide in a mixture of the gas carbon dioxide and the solid the carbon dioxide is at least 80%.  
     
     
         6 . The method of  claim 1 , wherein a temperature of the cooled nozzle is from -50 °C to -100 °C. 
     
     
         7 . The method of  claim 1 , wherein continuously and substantially horizontally moving the cooled nozzle above the surface of the substrate comprises tilting the cooled nozzle at an angle relative to the surface of the substrate, and the angle is from 20° to 70°. 
     
     
         8 . The method of  claim 1 , wherein a flow rate of the carbon dioxide from the gas cylinder is from 500 SCCM to 1000 SCCM. 
     
     
         9 . The method of  claim 1 , wherein a diameter of an exit hole of the cooled nozzle is from 0.5 mm to 10 mm. 
     
     
         10 . The method of  claim 1 , wherein a pressure in the vacuum chamber is from 0.1 Torr to 10 Torr. 
     
     
         11 . The method of  claim 1 , wherein when continuously and substantially horizontally moving the cooled nozzle above the surface of the substrate, a distance between the cooled nozzle and the substrate is from 8 cm to 15 cm. 
     
     
         12 . A method of using solid carbon dioxide to roughen a surface, comprising: 
 generating solid carbon dioxide, comprising directing carbon dioxide from a gas cylinder to pass through cooled nozzles to enter a vacuum chamber, in which the solid carbon dioxide is formed after the carbon dioxide passes through the cooled nozzles, and a velocity of the solid carbon dioxide exiting from the cooled nozzles is from 1000 m/s to 3000 m/s; and   bumping a surface of a substrate in the vacuum chamber with the solid carbon dioxide generated from the cooled nozzles to form a rough surface of the substrate.   
     
     
         13 . The method of  claim 12 , wherein the cooled nozzles form an array extending above the surface of the substrate.  
     
     
         14 . The method of  claim 12 , wherein the substrate comprises silicon oxide, silicon nitride, metal, or combinations thereof.  
     
     
         15 . The method of  claim 12 , wherein temperatures of the cooled nozzles are from -50 °C to -100 °C. 
     
     
         16 . The method of  claim 12 , wherein bumping the surface of the substrate in the vacuum chamber with the solid carbon dioxide generated from the cooled nozzles comprises tilting each one of the cooled nozzles at an angle relative to the surface of the substrate, and the angle is from 20° to 70°.