Photodetecting device and manufacturing method thereof

Abstract

The present disclosure relates to a photodetecting device and a method for manufacturing the same. The photodetecting device can control the direction and magnitude of the photocurrent generated by light through the polarity and magnitude of the operating voltage, thereby exhibiting advanced photoresponsivity. Accordingly, applying the photodetecting device to various types of optical analysis systems is very advantageous in terms of complexity and operational efficiency.

What is claimed is: 
     
         1 . A photodetecting device comprising a first electrode, a first charge transport layer disposed on the first electrode; a photoactive layer disposed on the first charge transport layer; a second charge transport layer disposed on the photoactive layer; and a second electrode disposed on the second charge transport layer. 
     
     
         2 . The photodetecting device according to  claim 1 , wherein the first charge transport layer, the photoactive layer, and the second charge transport layer are semiconductor layers. 
     
     
         3 . The photodetecting device according to  claim 1 , wherein the first and second charge transport layers are P-type semiconductor layers, and the photoactive layer is an N-type semiconductor layer in a P-N-P structure; or the first and second charge transport layers are N-type semiconductor layers, and the photoactive layer is a P-type semiconductor layer in an N-P-N structure. 
     
     
         4 . The photodetecting device according to  claim 1 , wherein the first charge transport layer, the photoactive layer, and the second charge transport layer are formed as planar heterojunctions. 
     
     
         5 . The photodetecting device according to  claim 1 , wherein the direction of the generated photocurrent changes by selectively transporting charge through either the first or second charge transport layer depending on the polarity of the voltage applied to the first and second electrodes. 
     
     
         6 . The photodetecting device according to  claim 1 , wherein the first and second charge transport layers are P-type semiconductor layers, the photoactive layer is an N-type semiconductor layer in a P-N-P structure, and the first and second charge transport layers are hole transport layers. 
     
     
         7 . The photodetecting device according to  claim 1 , wherein the first and second charge transport layers are N-type semiconductor layers, the photoactive layer is a P-type semiconductor layer in an N-P-N structure, and the first and second charge transport layers are electron transport layers. 
     
     
         8 . The photodetecting device according to  claim 1 , wherein the magnitude of the output photocurrent varies depending on the magnitude of the voltage applied to the first and second electrodes. 
     
     
         9 . The photodetecting device according to  claim 1 , wherein either one of the first electrode or the second electrode is a transparent or semi-transparent electrode, and the other electrode is an opaque electrode. 
     
     
         10 . The photodetecting device according to  claim 2 , wherein the semiconductor layer is formed from one or more materials selected from the group consisting of inorganic semiconductors, organic semiconductors, perovskites, and two-dimensional semiconductors. 
     
     
         11 . The photodetecting device according to  claim 3 , wherein the N-type semiconductor layer as the photoactive layer in the P-N-P structure and the N-type semiconductor layer as the first and second charge transport layers in the N-P-N structure are each independently formed from 1,4,5,8-naphthalene tetracarboxylic dianhydride, 3,4,9,10-perylene tetracarboxylic dianhydride, N,N′-dioctyl-3,4,9,10-naphthyl tetracarboxy diimide, oxazole derivatives, triazole derivatives, phenanthroline derivatives, fullerene derivatives, carbon nanotubes, or cyano-introduced poly-p-phenylene vinylene-based polymers (CN-PPV). 
     
     
         12 . The photodetecting device according to  claim 3 , wherein the P-type semiconductor layers as the first and second charge transport layers in the P-N-P structure and the P-type semiconductor layer as the photoactive layer in the N-P-N structure are each independently formed from TAPC (di-[4-(N, N-di-p-tolyl-amino)-phenyl]cyclohexane), P3HT (poly-3-hexylthiophene), PBDT-TPD (Poly{4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]-dithiophene-2,6-diyl-alt-(1,3-(5-octyl-4H-thieno[3,4-c]pyrrole- 4 , 6 (5H)-dione))}), PTB7 (Poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b: 4,5-b′]dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl})), PBDB-T (Poly[[4,8-bis[5-(2-ethylhexyl)-2- thienyl]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c′]dithiophene-1,3-diyl]] polymer) or PM6 (Poly[(2,6-(4,8-bis(5-(2-ethylhexyl-3-fluoro)thiophen-2-yl)-benzo[1,2-b: 4,5-b′]dithiophene))-alt-(5,5-(1′,3′-di-2-thienyl-5′,7′-bis(2-ethylhexyl)benzo[1′,2′-c:4′,5′-c′]dithiophene-4,8- dione)]). 
     
     
         13 . The photodetecting device according to  claim 1 , wherein the first and second charge transport layers and the photoactive layer are each composed of a single layer or a multilayer of two or more layers. 
     
     
         14 . The photodetecting device according to  claim 1 , wherein a hole transport layer, an electron blocking layer, or an electron transport layer is further interposed between the first electrode and the first charge transport layer and/or between the second electrode and the second charge transport layer. 
     
     
         15 . The photodetecting device according to  claim 1 , wherein the thickness of the photodetecting device is 50 nm to 50 μm. 
     
     
         16 . The photodetecting device according to  claim 1 , wherein the thickness of the first charge transport layer is 10 nm to 40μm. 
     
     
         17 . The photodetecting device according to  claim 1 , wherein the thickness of the second charge transport layer is 10 nm to 40μm. 
     
     
         18 . The photodetecting device according to  claim 1 , wherein the thickness of the photoactive layer is 10 nm to 40μm. 
     
     
         19 . A method for manufacturing a photodetecting device comprising the steps of forming a first electrode; disposing a first charge transport layer on the first electrode; disposing a photoactive layer on the first charge transport layer; disposing a second charge transport layer on the photoactive layer; and disposing a second electrode on the second charge transport layer. 
     
     
         20 . The method for manufacturing a photodetecting device according to  claim 19 , further comprising the step of disposing a hole transport layer, an electron blocking layer, or an electron transport layer on the first electrode before disposing the first charge transport layer; or
 the step of disposing a hole transport layer, an electron blocking layer, or an electron transport layer on the second charge transport layer before disposing the second electrode.