Image sensing device and method for manufacturing the same

Abstract

Image sensing devices and methods for manufacturing the image sensing devices are disclosed. In an embodiment, an image sensing device may include a plurality of image sensing pixels disposed in a substrate. Each of the plurality of image sensing pixels may include a photodetector (e.g., photodiode) disposed in a substrate, an interconnect layer disposed on a first side of the substrate; a color filter disposed on a second side of the substrate opposite to the first side of the substrate; a first light absorbing area disposed in the interconnect layer; and a second light absorbing area disposed in the substrate.

What is claimed is: 
     
         1 . An image sensing device comprising:
 a plurality of image sensing pixels,   wherein each of the plurality of image sensing pixels comprises,
 a photodiode disposed in a substrate; 
 an interconnect layer disposed on a first side of the substrate; 
 a color filter disposed on a second side of the substrate opposite to the first side of the substrate; 
 a first light absorbing area disposed in the interconnect layer; and 
 a second light absorbing area disposed in the substrate. 
   
     
     
         2 . The image sensing device of  claim 1 , wherein the first light absorbing area includes: a first portion that is disposed in the interconnect layer; and a second portion that is disposed in the substrate. 
     
     
         3 . The image sensing device of  claim 2 , wherein the second light absorbing area is disposed over the first light absorbing area. 
     
     
         4 . The image sensing device of  claim 3 , wherein one area of the second light absorbing area is disposed in one area of the color filter. 
     
     
         5 . The image sensing device of  claim 1 , wherein an upper end of the first light absorbing area is directly or indirectly connected to a lower end of the second light absorbing area. 
     
     
         6 . The image sensing device of  claim 5 , wherein the first light absorbing area and the second light absorbing area extend through the substrate. 
     
     
         7 . The image sensing device of  claim 1 , further comprising:
 a first isolation area disposed between the first light absorbing area and the second light absorbing area.   
     
     
         8 . The image sensing device of  claim 7 , wherein the first light absorbing area, the second light absorbing area, and the first isolation area extend through the substrate. 
     
     
         9 . The image sensing device of  claim 7 , further comprising:
 a second isolation area disposed over the second light absorbing area.   
     
     
         10 . The image sensing device of  claim 9 , wherein the second isolation area is disposed in an area of the color filter. 
     
     
         11 . The image sensing device of  claim 7 , wherein the first isolation area includes an insulating material. 
     
     
         12 . The image sensing device of  claim 9 , wherein the second isolation area includes an air layer. 
     
     
         13 . The image sensing device of  claim 7 , wherein the second light absorbing area includes:
 a first portion disposed over the first isolation area, and   a second portion extending into an area of the color filter.   
     
     
         14 . The image sensing device of  claim 1 , wherein the first light absorbing area includes a polysilicon. 
     
     
         15 . The image sensing device of  claim 1 , wherein the second light absorbing area includes a material with a first infrared ray absorption rate that is higher than a reference infrared ray absorption rate. 
     
     
         16 . The image sensing device of  claim 1 , wherein the second light absorbing area comprises at least one of a photoglass material, a metal oxide and an organic coating material. 
     
     
         17 . An image sensing device comprising:
 a semiconductor substrate;   a first light absorbing area disposed in the semiconductor substrate;   a plurality of photodiodes disposed in the semiconductor substrate; and   a second light absorbing area substrate that separates each of the plurality of photodiodes and is disposed in disposed in the semiconductor substrate.   
     
     
         18 . The image sensing device of  claim 17 , wherein the second light absorbing area extends through the semiconductor substrate. 
     
     
         19 . The image sensing device of  claim 17 , further comprising:
 a first isolation area disposed at an end of the second light absorbing area.   
     
     
         20 . The image sensing device of  claim 19 , wherein the second light absorbing area and the first isolation area extend through the semiconductor substrate.