Reticle stitching for semiconductors

Abstract

A semiconductor device includes a first field and a second field connected to the first field across a stitch region by a metal line. A merged portion within the stitch region connects portions of the metal line between the first field and the second field. The portions of the metal line each include angled portions that extend beyond a width of the metal line.

1 . A semiconductor device, comprising:
 a first field;   a second field connected to the first field across a stitch region by a metal line; and   a merged portion within the stitch region, the merged portion connecting portions of the metal line between the first field and the second field, the portions of the metal line each including angled portions that extend beyond a width of the metal line.   
     
     
         2 . The semiconductor device as recited in  claim 1 , wherein the angled portions of the portions of the metal line form a “V” shape. 
     
     
         3 . The semiconductor device as recited in  claim 1 , wherein the merged portion connects the portions of the metal line at the angled portions. 
     
     
         4 . The semiconductor device as recited in  claim 1 , wherein the portions of the metal line are laterally offset relative to each other. 
     
     
         5 . The semiconductor device as recited in  claim 1 , wherein the first field includes conductive structures patterned with a first reticle, and the second field includes conductive structures patterned with a second reticle. 
     
     
         6 . The semiconductor device as recited in  claim 1 , wherein the first field includes a semiconductor die. 
     
     
         7 . The semiconductor device as recited in  claim 1 , wherein the first field and the second field include portions of a semiconductor die. 
     
     
         8 . A semiconductor device, comprising:
 a first field;   a second field connected to the first field across a stitch region by a metal line; and   a merged portion within the stitch region, the merged portion connecting portions of the metal line between the first field and the second field, the portions of the metal line each including crossed lines that extend beyond a width of the metal line.   
     
     
         9 . The semiconductor device as recited in  claim 8 , wherein the crossed lines of the portions of the metal line form an “X” shape. 
     
     
         10 . The semiconductor device as recited in  claim 8 , wherein the merged portion connects the portions of the metal line at the crossed lines. 
     
     
         11 . The semiconductor device as recited in  claim 8 , wherein the portions of the metal line are laterally offset relative to each other. 
     
     
         12 . The semiconductor device as recited in  claim 8 , wherein the first field includes conductive structures patterned with a first reticle, and the second field includes conductive structures patterned with a second reticle. 
     
     
         13 . The semiconductor device as recited in  claim 12 , wherein the crossed lines are patterned with a third reticle. 
     
     
         14 . The semiconductor device as recited in  claim 8 , wherein the first field includes a semiconductor die. 
     
     
         15 . The semiconductor device as recited in  claim 8 , wherein the first field and the second field include portions of a semiconductor die. 
     
     
         16 . A method for fabricating a semiconductor device, comprising:
 transferring a first pattern to a photoresist through a first reticle, the first pattern having end lines having first angled end portions which extend beyond a width of the end lines;   transferring a second pattern to the photoresist through a second reticle in a position adjacent to the first pattern to form a second pattern having end lines having second angled end portions which extend beyond a width of the end lines, such that the first angled end portions and the second angled end portions are merged in an overlap region between the first pattern and the second pattern;   etching a dielectric layer in accordance with the first pattern and the second pattern; and   forming metal lines in accordance with the first pattern and the second pattern which are connected through the first angled end portions and the second angled end portions.   
     
     
         17 . The method as recited in  claim 16 , wherein the first angled end portions and the second angled end portions form a ‘V” shape on a metal line. 
     
     
         18 . The method as recited in  claim 16 , wherein the first angled end portions and the second angled end portions form an “X” shape on a metal line. 
     
     
         19 . The method as recited in  claim 16 , wherein the “X” shape on the metal line is patterned with a third reticle. 
     
     
         20 . The method as recited in  claim 16 , wherein the end lines of the first pattern are laterally offset relative to the end lines of the second pattern.