Method for processing a substrate

Abstract

A method for processing a substrate includes bombarding the substrate with a local substrate processing tool. A top surface of the substrate includes lithium. After bombarding the top surface with the local substrate processing tool, a co-gas including an acidic gas is flowed over the substrate.

What is claimed is: 
     
         1 . A method for processing a substrate, the method comprising:
 bombarding the substrate with a local substrate processing tool, a top surface of the substrate comprising lithium; and   after bombarding the top surface with the local substrate processing tool, flowing a co-gas comprising an acidic gas over the substrate.   
     
     
         2 . The method of  claim 1 , wherein the top surface of the substrate comprises lithium tantalate. 
     
     
         3 . The method of  claim 1 , wherein the top surface of the substrate comprises lithium niobate. 
     
     
         4 . The method of  claim 1 , wherein the acidic gas comprises pentafluoropropionic acid. 
     
     
         5 . The method of  claim 1 , wherein flowing the co-gas further comprises flowing a carrier gas. 
     
     
         6 . The method of  claim 5 , wherein the carrier gas comprises helium. 
     
     
         7 . The method of  claim 5 , wherein the carrier gas comprises argon. 
     
     
         8 . The method of  claim 5 , wherein the carrier gas comprises nitrogen. 
     
     
         9 . The method of  claim 1 , wherein the local substrate processing tool comprises a gas cluster beam. 
     
     
         10 . The method of  claim 9 , wherein the gas cluster beam comprises fluorine. 
     
     
         11 . A method for processing a substrate, the method comprising:
 providing the substrate into a process chamber, a top surface of the substrate comprising lithium; and   performing a trimming process on the top surface of the substrate, the trimming process comprising:
 forming a reactive surface layer over the top surface with a gas cluster beam; and 
 removing the reactive surface layer by flowing an acidic gas in combination with a carrier gas. 
   
     
     
         12 . The method of  claim 11 , wherein the top surface of the substrate is lithium tantalate. 
     
     
         13 . The method of  claim 12 , wherein the reactive surface layer comprises amorphous tantalum oxide. 
     
     
         14 . The method of  claim 11 , wherein the top surface of the substrate is lithium niobate. 
     
     
         15 . The method of  claim 14 , wherein the reactive surface layer comprises amorphous niobium oxide. 
     
     
         16 . The method of  claim 11 , wherein the acidic gas comprises pentafluoropropionic acid. 
     
     
         17 . The method of  claim 11 , wherein the carrier gas comprises helium, argon, or nitrogen. 
     
     
         18 . A system comprising:
 a process chamber, the process chamber comprising a substrate holder;   a gas flow system coupled with the process chamber, the gas flow system being configured to bombard a substrate disposed on the substrate holder with a flux of gas clusters; and   a co-gas supply system, the co-gas supply system being configured to supply an acidic co-gas to the substrate, the acidic co-gas reacting with a top surface of the substrate exposed to the gas clusters.   
     
     
         19 . The system of  claim 18 , wherein the acidic co-gas comprises pentafluoropropionic acid. 
     
     
         20 . The system of  claim 18 , wherein the gas flow system is configured to bombard the substrate with gas clusters comprising fluorine.