Metal patterning method, metal adhesion improvement composition for semiconductor process, and manufacturing method thereof

Abstract

Provided are a metal patterning method, a metal adhesion improvement composition for the semiconductor process, and a method of manufacturing the same. The metal patterning method includes depositing a metal layer on a substrate; coating an adhesion improvement layer on the metal layer; applying an organic mask on the adhesion improvement layer; performing exposing and etching; and removing the organic mask and adhesion improvement layer, wherein the coating of an adhesion improvement layer on the metal layer includes coating a metal adhesion improvement composition for the semiconductor process on the metal layer followed by heating. By using the metal adhesion improvement composition for the semiconductor process of the present invention, resistance to wet etching can be enhanced during semiconductor processes, allowing metal patterning to be performed very effectively.

What is claimed is: 
     
         1 . A metal patterning method, comprising
 depositing a metal layer on a substrate;   coating an adhesion improvement layer on the metal layer;   applying an organic mask on the adhesion improvement layer;   etching the metal layer using the organic mask; and   removing the organic mask and adhesion improvement layer from the etched metal layer,   wherein the coating of the adhesion improvement layer on the metal layer comprises   coating a metal adhesion improvement composition on the metal layer, and   heating the metal adhesion improvement composition,   wherein the metal adhesion improvement composition includes a polymer comprising structural units represented by Chemical Formula 1 and Chemical Formula 2   
       
         
           
           
               
               
           
         
         wherein, in Chemical Formula 1 and Chemical Formula 2, 
         R 1  is a substituted or unsubstituted C1 to C20 alkyl group, 
         L 1  is a single bond, a substituted or unsubstituted C1 to C20 alkylene group, *—C(═O)NH—*, or *—O—*, and 
         L 2  is a single bond or a substituted or unsubstituted C1 to C20 alkylene group. 
       
     
     
         2 . The metal patterning method of  claim 1 , wherein
 Chemical Formula 2 is represented by at least one of Chemical Formula 2-1 or Chemical Formula 2-2:   
       
         
           
           
               
               
           
         
       
     
     
         3 . The metal patterning method of  claim 1 , wherein the etching comprises:
 exposing the organic mask;   dry etching the organic mask after the exposure such that regions of the organic mask are removed; and   performing wet etching after the dry etching.   
     
     
         4 . The metal patterning method of  claim 1 , wherein
 the polymer comprises a structural unit represented by Chemical Formula 3:   
       
         
           
           
               
               
           
         
         wherein, in Chemical Formula 3, n:m=1:9 to 9:1. 
       
     
     
         5 . The metal patterning method of  claim 1 , wherein
 R 1  is the unsubstituted C1 to C10 alkyl group,   L 1  is the *—C(═O)NH—*, and   L 2  is the substituted or unsubstituted C1 to C20 alkylene group.   
     
     
         6 . The metal patterning method of  claim 1 , wherein
 the heating is performed at about 100° C. to about 200° C.   
     
     
         7 . The metal patterning method of  claim 1 , wherein
 the metal layer comprises TiN.   
     
     
         8 . The metal patterning method of  claim 1 , wherein
 the organic mask is a catechol-based compound-free mask.   
     
     
         9 . A metal adhesion improvement composition comprising:
 a polymer including structural units represented by Chemical Formula 1 and Chemical Formula 2:   
       
         
           
           
               
               
           
         
         wherein, in Chemical Formula 1 and Chemical Formula 2, 
         R 1  is a substituted or unsubstituted C1 to C20 alkyl group, 
         L 1  is a single bond, a substituted or unsubstituted C1 to C20 alkylene group, *—C(═O)NH—*, or *—O—*, and 
         L 2  is a single bond or a substituted or unsubstituted C1 to C20 alkylene group. 
       
     
     
         10 . The metal adhesion improvement composition of  claim 9 , wherein
 Chemical Formula 2 is represented by at least one of Chemical Formula 2-1 or Chemical Formula 2-2:   
       
         
           
           
               
               
           
         
       
     
     
         11 . The metal adhesion improvement composition of  claim 9 , wherein
 the polymer comprises a structural unit represented by Chemical Formula 3:   
       
         
           
           
               
               
           
         
         wherein, in Chemical Formula 3, n:m=1:9 to 9:1. 
       
     
     
         12 . The metal adhesion improvement composition of  claim 11 , wherein the n:m=5:5 to 9:1. 
     
     
         13 . The metal adhesion improvement composition of  claim 9 , wherein
 R 1  is the unsubstituted C1 to C10 alkyl group,   L 1  is the *—C(═O)NH—*, and   L 2  is the substituted or unsubstituted C1 to C20 alkylene group.   
     
     
         14 . The metal adhesion improvement composition of  claim 9 , wherein
 the polymer has a weight average molecular weight of about 3000 g/mol to about 8000 g/mol.   
     
     
         15 . The metal adhesion improvement composition of  claim 9 , further comprises:
 an organic solvent.   
     
     
         16 . The metal adhesion improvement composition of  claim 15 , wherein the polymer including structural units represented by Chemical Formula 1 and Chemical Formula 2 is included in an amount of about 0.1 wt % to about 10 wt % based on a total amount of the metal adhesion improvement composition including the organic solvent. 
     
     
         17 . The metal adhesion improvement composition of  claim 16 , wherein the amount of the polymer including structural units represented by Chemical Formula 1 and Chemical Formula 2 is of about 1 wt % to about 5 wt % based on the total amount of the metal adhesion improvement composition including the organic solvent. 
     
     
         18 . A method for manufacturing a metal adhesion improvement composition for a semiconductor process, comprising
 forming a copolymer by copolymerizing a monomer represented by Chemical Formula 4 and a monomer represented by Chemical Formula 5; and   adding the copolymer to an organic solvent:   
       
         
           
           
               
               
           
         
         wherein, in Chemical Formula 4 and Chemical Formula 5, 
         R 1  is a substituted or unsubstituted C1 to C20 alkyl group, 
         L 1  is a single bond, a substituted or unsubstituted C1 to C20 alkylene group, *—C(═O)NH—*, or *—O—*, and 
         L 2  is a single bond or a substituted or unsubstituted C1 to C20 alkylene group. 
       
     
     
         19 . The method of  claim 18 , wherein
 the copolymer comprises a structural unit represented by Chemical Formula 3:   
       
         
           
           
               
               
           
         
         wherein, in Chemical Formula 3, n:m=1:9 to 9:1. 
       
     
     
         20 . The method of  claim 19 , wherein
 the copolymer comprises a structural unit represented by Chemical Formula 3-1: