US2026011553A1PendingUtilityA1

Technique for GaN Epitaxy on Insulating Substrates

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Assignee: TEXAS INSTRUMENTS INCPriority: Feb 3, 2021Filed: Sep 15, 2025Published: Jan 8, 2026
Est. expiryFeb 3, 2041(~14.5 yrs left)· nominal 20-yr term from priority
Inventors:DELLAS NICHOLAS SSUMMERFELT SCOTT ROBERT
H10P 95/904H10P 52/00H10P 14/2908H10P 14/3416H10P 30/208H10P 30/206H10P 90/1914H10P 90/00H01L 21/3245H01L 21/304H01L 21/02389H01L 21/0254
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Claims

Abstract

A semiconductor device includes a substrate, a dielectric layer on the substrate, a first epitaxial layer on the dielectric layer, and a second epitaxial layer on the first epitaxial layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device including:
 a substrate;   a dielectric layer on the substrate;   a first epitaxial layer on the dielectric layer; and   a second epitaxial layer on the first epitaxial layer.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the substrate includes a p-type aluminum nitride (AlN) material. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the substrate has a thermal expansion match to at least one of the first or second epitaxial layers. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the substrate includes an insulating material. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the dielectric layer includes silicon dioxide. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the first epitaxial layer includes gallium nitride (GaN) and is gallium facing. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the first epitaxial layer includes aluminum nitride (AlN) or aluminum gallium nitride (AlGaN). 
     
     
         8 . The semiconductor device of  claim 1 , wherein the first epitaxial layer has a thickness of about 0.5 microns. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the second epitaxial layer includes doped GaN. 
     
     
         10 . The semiconductor device of  claim 9 , wherein the second epitaxial layer includes unintentionally doped (UID) GaN. 
     
     
         11 . The semiconductor device of  claim 9 , wherein the second epitaxial layer includes undoped GaN. 
     
     
         12 . The semiconductor device of  claim 9 , wherein the second epitaxial layer includes at least one of: AlGaN, AlN, or GaN. 
     
     
         13 . The semiconductor device of  claim 9 , wherein the second epitaxial layer has a thickness of about 0.5 microns. 
     
     
         14 . The semiconductor device of  claim 1 , further comprising a high electron mobility transistor (HEMT) formed in the second epitaxial layer. 
     
     
         15 . The semiconductor device of  claim 14 , wherein the HEMT is a depletion-mode HEMT or an enhancement-mode HEMT. 
     
     
         16 . The semiconductor device of  claim 1 , wherein the first epitaxial layer has a polished surface interfacing the second epitaxial layer.

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