Polishing liquid, polishing liquid set, polishing method, component production method, and semiconductor component production method

Abstract

A polishing liquid containing: abrasive grains; an additive; and water, in which the additive includes (A1) a polyglycerol having a weight average molecular weight of 350 to 2800 and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded. A polishing liquid containing: abrasive grains; an additive; and water, in which the additive includes (A2) a polyglycerol having a hydroxyl value of 800 to 1000 mgKOH/g and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.

1 . A polishing liquid comprising: abrasive grains; an additive; and water, wherein
 the additive includes (A1) a polyglycerol having a weight average molecular weight of 350 to 2800 and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.   
     
     
         2 . A polishing liquid comprising: abrasive grains; an additive; and water, wherein
 the additive includes (A2) a polyglycerol having a hydroxyl value of 800 to 1000 mgKOH/g and (B) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded.   
     
     
         3 . The polishing liquid according to  claim 1 , wherein the abrasive grains contain cerium oxide, and
 a content of the cerium oxide is 50% by mass or more on the basis of the whole abrasive grains contained in the polishing liquid.   
     
     
         4 . (canceled) 
     
     
         5 . The polishing liquid according to  claim 1 , wherein the component (B) includes an ethylenedinitrilotetraethanol. 
     
     
         6 . The polishing liquid according to  claim 1 , wherein the component (B) includes an ethylenedinitrilotetrapropanol. 
     
     
         7 . (canceled) 
     
     
         8 . The polishing liquid according to  claim 1 , wherein the additive further includes a 4-pyrone-based compound represented by General Formula (1) below: 
       
         
           
           
               
               
           
         
       
       [in the formula, X 11 , X 12 , and X 13  are each independently a hydrogen atom or a monovalent substituent.] 
     
     
         9 . The polishing liquid according to  claim 8 , wherein the 4-pyrone-based compound includes at least one selected from the group consisting of 3-hydroxy-2-methyl-4-pyrone, 5-hydroxy-2-(hydroxymethyl)-4-pyrone, and 2-ethyl-3-hydroxy-4-pyrone. 
     
     
         10 . (canceled) 
     
     
         11 . (canceled) 
     
     
         12 . The polishing liquid according to  claim 1 , wherein a pH is 8.00 or less. 
     
     
         13 . A polishing liquid set, comprising:
 constituent components of the polishing liquid according to  claim 1 , separately stored as a first liquid and a second liquid, wherein   the first liquid contains the abrasive grains and water, and   the second liquid contains at least one of the additive, and water.   
     
     
         14 . A polishing method comprising a step of polishing a surface to be polished of a member to be polished by using the polishing liquid according to  claim 1 . 
     
     
         15 . A method for manufacturing a component, comprising: obtaining a component by using a polished member polished by the polishing method according to  claim 14 . 
     
     
         16 . A method for manufacturing a semiconductor component, comprising:
 obtaining a semiconductor component by using a polished member polished by the polishing method according to  claim 14 .   
     
     
         17 . The polishing liquid according to  claim 2 , wherein the abrasive grains contain cerium oxide, and
 a content of the cerium oxide is 50% by mass or more on the basis of the whole abrasive grains contained in the polishing liquid.   
     
     
         18 . The polishing liquid according to  claim 2 , wherein the component (B) includes an ethylenedinitrilotetraethanol. 
     
     
         19 . The polishing liquid according to  claim 2 , wherein the component (B) includes an ethylenedinitrilotetrapropanol. 
     
     
         20 . The polishing liquid according to  claim 2 , wherein the additive further includes a 4-pyrone-based compound represented by General Formula (1) below: 
       
         
           
           
               
               
           
         
       
       [in the formula, X 11 , X 12 , and X 13  are each independently a hydrogen atom or a monovalent substituent.] 
     
     
         21 . The polishing liquid according to  claim 20 , wherein the 4-pyrone-based compound includes at least one selected from the group consisting of 3-hydroxy-2-methyl-4-pyrone, 5-hydroxy-2-(hydroxymethyl)-4-pyrone, and 2-ethyl-3-hydroxy-4-pyrone. 
     
     
         22 . The polishing liquid according to  claim 2 , wherein a pH is 8.00 or less. 
     
     
         23 . A polishing liquid set, comprising:
 constituent components of the polishing liquid according to  claim 2 , separately stored as a first liquid and a second liquid, wherein   the first liquid contains the abrasive grains and water, and   the second liquid contains at least one of the additive, and water.   
     
     
         24 . A polishing method comprising a step of polishing a surface to be polished of a member to be polished by using the polishing liquid according to  claim 2 . 
     
     
         25 . A method for manufacturing a component, comprising: obtaining a component by using a polished member polished by the polishing method according to  claim 24 . 
     
     
         26 . A method for manufacturing a semiconductor component, comprising: obtaining a semiconductor component by using a polished member polished by the polishing method according to  claim 24 .