Methods of forming a structure on a substrate and associated methods of filling a recessed feature on a substrate

Abstract

Methods for filling a recessed feature on a substrate employing metal sequential infiltration synthesis processes are disclosed. The disclosed methods include forming an organic layer within a recessed feature and introducing metal species into the organic layer to allow the formation of a metal seed layer. A bulk metal layer can subsequently be formed from the metal seed layer to fill the recessed feature.

What is claimed is: 
     
         1 . A method of forming a structure on a substrate, the method comprising:
 at the substrate including a photosensitive layer on a surface of the substrate;   irradiating select regions of the photosensitive layer with electromagnetic radiation thereby forming a first region having a first concentration of —OH groups and a second region having a second concentration of —OH, wherein the first concentration of —OH groups is greater than the second first concentration of —OH groups;   performing a sequential infiltration synthesis process thereby forming a first infiltrated photosensitive layer in the first region, a non-infiltrated layer disposed below the first infiltrated photosensitive layer, and a second infiltrated photosensitive layer in the second region;   removing the first infiltrated photosensitive layer;   removing the non-infiltrated layer; and   removing a residual component of the second infiltrated photosensitive layer thereby forming a metal containing layer on the surface of the substrate.   
     
     
         2 . The method of  claim 1 , wherein performing the sequential infiltration synthesis process comprising executing one more repeated infiltration cycles, each infiltration cycle comprising at least introducing a first reactant comprising a metal species into a reaction chamber. 
     
     
         3 . The method of  claim 2 , wherein each infiltration cycle further comprises introducing a second reactant into the reaction chamber, the second reactant comprising one or more of an oxygen reactant, a nitrogen reactant, a carbon reactant, or a reducing agent. 
     
     
         4 . The method of  claim 2 , wherein the metal species comprises one or more of aluminum, hafnium, titanium, niobium, tungsten, cobalt, ruthenium, silicon, germanium, and molybdenum. 
     
     
         5 . The method of  claim 1 , wherein removing the first infiltrated photosensitive layer comprises contacting the first infiltrated photosensitive layer with an etchant to expose the non-infiltrated layer. 
     
     
         6 . The method of  claim 1 , wherein removing the non-infiltrated layers and the residual component of the second infiltrated photosensitive layer comprises contacting the non-infiltrated layer and the second infiltrated photosensitive layer with a plasma generated from an oxygen containing gas. 
     
     
         7 . A method of filling a recessed feature, the method comprising:
 at a substrate comprising the recessed feature and a photosensitive layer disposed over the recessed feature;   irradiating the photosensitive layer with electromagnetic radiation having a wavelength equal to or less than an upper dimension of the recessed feature thereby forming a first region in the photosensitive layer having a first concentration of —OH groups and a second region in the photosensitive layer having a second concentration of —OH, wherein the first concentration of —OH groups is greater than the second first concentration of —OH groups;   performing a sequential infiltration synthesis process thereby forming a first infiltrated photosensitive layer in the first region, a non-infiltrated layer disposed below the first infiltrated photosensitive layer, and a second infiltrated photosensitive layer in the second region;   removing the first infiltrated photosensitive layer;   removing the non-infiltrated layer;   removing a residual component of the second infiltrated photosensitive layer to form a metal containing layer disposed at a lower surface of the recessed feature; and   forming a bulk layer directly on the metal containing layer, wherein the bulk layer fills the recessed feature.   
     
     
         8 . The method of  claim 7 , wherein performing the sequential infiltration synthesis process comprises executing one more repeated infiltration cycles, each infiltration cycle comprising at least introducing a first reactant comprising a metal precursor including a metal species into a reaction chamber. 
     
     
         9 . The method of  claim 8 , wherein each infiltration cycle further comprises introducing a second reactant into the reaction chamber, the second reactant comprising one or more of an oxygen reactant, a nitrogen reactant, or a carbon reactant into the reaction chamber. 
     
     
         10 . The method of  claim 8 , wherein the metal species comprises one or more of aluminum, hafnium, titanium, niobium, tungsten, cobalt, ruthenium, silicon, germanium, and molybdenum. 
     
     
         11 . The method of  claim 1 , wherein the photosensitive layer comprises an organic layer. 
     
     
         12 . The method of  claim 7 , wherein the residual component comprises a residual organic component and removing the residual organic component comprises contacting the residual organic component with a plasma generated from an oxygen containing gas. 
     
     
         13 . The method of  claim 8 , wherein forming the bulk layer directly on the metal containing layer comprises depositing the bulk layer by a cyclical deposition process. 
     
     
         14 . The method of  claim 13 , wherein the bulk layer comprises one or more of a metal, a metal oxide, a metal nitride, and a metal carbide. 
     
     
         15 . The method of  claim 13 , wherein the bulk layer and the metal containing layer both comprise the metal species. 
     
     
         16 . The method of  claim 13 , wherein the bulk layer is different to the metal containing layer. 
     
     
         17 . The method of  claim 7 , further comprising thermally treating the photosensitive layer in an ammonia (NH 3 ) ambient prior to performing the sequential infiltration synthesis process. 
     
     
         18 . A lithography-free method of bottom-up gap filling of a recessed feature, the method comprising:
 at a substrate comprising an organic photosensitive layer disposed on the recessed feature, wherein the recessed feature comprises an upper dimension, a lower surface, and an upper surface;   irradiating the organic photosensitive layer with electromagnetic radiation having a wavelength equal to or less than the upper dimension of the recessed feature thereby forming a first region in the organic photosensitive layer having a first concentration of —OH groups and a second region in the organic photosensitive layer having a second concentration of —OH, wherein the first concentration of-OH groups is greater than the second first concentration of —OH groups;   thermally treating the organic photosensitive layer in an ammonia (NH 3 ) ambient;   performing at least one infiltration cycle of a sequential infiltration synthesis (SIS) sequence to introduce a metal species into the organic photosensitive layer thereby forming a first metal infiltrated layer in the first region, a second metal infiltrated region in the second region, and a non-infiltrated layer, wherein the metal species is selected from a group consisting of the metal species comprises one or more of aluminum, hafnium, titanium, niobium, tungsten, cobalt, ruthenium, silicon, germanium, and molybdenum;   contacting the first metal infiltrated layer with an etchant to remove the first metal infiltrated layer;   contacting the non-infiltrated layer and a residual organic component of the second metal infiltrated region with a plasma generated from an oxygen reactant thereby at least partially filling the recessed feature with a metal containing layer.   
     
     
         19 . The method of  claim 18 , wherein the metal containing layer fills the recessed feature to the upper surface without the formation of a seam. 
     
     
         20 . The method of  claim 18 , wherein the metal containing layer partially fills the recessed feature and a bulk layer is deposited on the metal containing layer to fill the recessed feature to the upper surface without the formation of a seam.