Chip-scale package light emitting diode

Abstract

A chip-scale package type light emitting diode is provided. In the light emitting diode according to one embodiment, an opening exposing a pad metal layer is separated from an opening of a lower insulation layer which exposes an ohmic reflection layer formed on a mesa. Therefore, it is possible to prevent solder, particularly Sn, from diffusing and contaminating the ohmic reflection layer.

What is claimed: 
     
         1 . A light apparatus, comprising:
 a support substrate including a conductive pattern;   a light source disposed on the substrate and electrically connected to the conductive pattern; and   a light transmissive layer disposed on the light source,   wherein the light source includes:
 a substate including a first side and second side opposite to the first side; 
 a first conductivity type semiconductor layer disposed on the substrate; 
 a mesa disposed on the first conductivity type semiconductor layer, the mesa comprising an active layer and a second conductivity type semiconductor layer; 
 an ohmic layer disposed on the mesa and electrically connected to the second conductivity type semiconductor layer; 
 a lower insulation layer disposed on the ohmic layer and including a first material; 
 a first pad metal layer disposed on the lower insulation layer and electrically connected to the first conductivity type semiconductor layer; 
 a second pad metal layer disposed on the lower insulation layer and electrically connected to the ohmic layer; 
 a first pad connected to the first pad metal layer; and 
 a second pad connected to the second pad metal layer, 
   wherein the lower insulation layer includes a first opening disposed on the first conductivity type semiconductor layer and second openings disposed on the ohmic layer, wherein the first pad metal layer includes an outer contact region disposed adjacent to the first side and an inner contact region extended from the outer contact region toward the second side, and the inner contact region is disposed between the second openings, and   wherein the lower insulation layer is exposed to a boundary region that is between the first pad metal layer and the second pad metal layer.   
     
     
         2 . The light apparatus of  claim 1 , wherein the mesa includes an indentation indented from the first side toward the second side of the substrate. 
     
     
         3 . The light apparatus of  claim 2 , wherein an upper surface of the first conductivity type semiconductor layer is exposed in the indentation, and the first pad metal layer contacts the upper surface of the first conductivity type semiconductor layer in the indentation. 
     
     
         4 . The light apparatus of  claim 3 , wherein the first opening is disposed on the indentation. 
     
     
         5 . The light apparatus of  claim 3 , wherein the indentation includes an end terminal having a round shape. 
     
     
         6 . The light apparatus of  claim 1 , wherein the second openings have an elongated shape. 
     
     
         7 . The light apparatus of  claim 1 , wherein the second pad is disposed on an upper surface of the second pad metal layer, and an outer boundary of the second pad is disposed within an outer boundary of the second pad metal layer. 
     
     
         8 . A light apparatus, comprising:
 a support substrate including a conductive pattern;   a light source disposed on the substrate and electrically connected to the conductive pattern; and   a light transmissive layer disposed on the light source,   wherein the light source includes:
 a substate including a first side and second side opposite to the first side; 
 a first conductivity type semiconductor layer disposed on the substrate; 
 a mesa disposed on the first conductivity type semiconductor layer, the mesa comprising an active layer and a second conductivity type semiconductor layer; 
 an ohmic layer disposed on the mesa and electrically connected to the second conductivity type semiconductor layer; 
 a lower insulation layer disposed on the ohmic layer and including a first material; 
 a first pad metal layer disposed on the lower insulation layer and electrically connected to the first conductivity type semiconductor layer; 
 a second pad metal layer disposed on the lower insulation layer and electrically connected to the ohmic layer; 
 a first pad connected to the first pad metal layer; and 
 a second pad connected to the second pad metal layer, 
   wherein the lower insulation layer includes a first opening and a second opening disposed on the second conductivity type semiconductor layer,   wherein the first pad metal layer includes an outer contact region disposed adjacent to the first side and an inner contact region extended from the outer contact region toward the second side, and the inner contact region is disposed between the first opening and the second opening, and   wherein the lower insulation layer is exposed to a boundary region that is between the first pad metal layer and the second pad metal layer.   
     
     
         9 . The light apparatus of  claim 8 , wherein the mesa includes an indentation indented from the first side toward the second side of the substrate. 
     
     
         10 . The light apparatus of  claim 9 , wherein an upper surface of the first conductivity type semiconductor layer is exposed in the indentation, and the first pad metal layer contacts the upper surface of the first conductivity type semiconductor layer in the indentation. 
     
     
         11 . The light apparatus of  claim 9 , wherein the indentation includes an end terminal having a round shape. 
     
     
         12 . The light apparatus of  claim 8 , wherein the first and second openings have an elongated shape. 
     
     
         13 . The light apparatus of  claim 8 , wherein the second pad is disposed on an upper surface of the second pad metal layer, and an outer boundary of the second pad is disposed within an outer boundary of the second pad metal layer. 
     
     
         14 . A light apparatus, comprising:
 a support substrate including a conductive pattern;   a light source disposed on the substrate and electrically connected to the conductive pattern; and   a light transmissive layer disposed on the light source,   wherein the light source includes:
 a substate including a first side and second side opposite to the first side; 
 a first conductivity type semiconductor layer disposed on the substrate; 
 a mesa disposed on the first conductivity type semiconductor layer, the mesa comprising an active layer and a second conductivity type semiconductor layer; 
 an ohmic layer disposed on the mesa and electrically connected to the second conductivity type semiconductor layer; 
 a lower insulation layer disposed on the ohmic layer and including a first material; 
 a first pad metal layer disposed on the lower insulation layer and electrically connected to the first conductivity type semiconductor layer; 
 a second pad metal layer disposed on the lower insulation layer and electrically connected to the ohmic layer; 
 a first pad connected to the first pad metal layer; and 
 a second pad connected to the second pad metal layer, 
   wherein the lower insulation layer includes a first opening disposed on the first conductivity type semiconductor layer and second openings disposed on the second conductivity type semiconductor layer,   wherein the first pad metal layer includes an outer contact region disposed adjacent to the first side and an inner contact region extended from the outer contact region toward the second side, and the inner contact region extends between the second openings, and   wherein the lower insulation layer is exposed to a boundary region that is between the first pad metal layer and the second pad metal layer.   
     
     
         15 . The light apparatus of  claim 14 , wherein the mesa includes an indentation indented from the first side toward the second side of the substrate. 
     
     
         16 . The light apparatus of  claim 15 , wherein an upper surface of the first conductivity type semiconductor layer is exposed in the indentation, and the first pad metal layer contacts the upper surface of the first conductivity type semiconductor layer in the indentation. 
     
     
         17 . The light apparatus of  claim 16 , wherein the first opening is disposed on the indentation. 
     
     
         18 . The light apparatus of  claim 15 , wherein the indentation includes an end terminal having a round shape. 
     
     
         19 . The light apparatus of  claim 14 , wherein the first and second openings have an elongated shape. 
     
     
         20 . The light apparatus of  claim 14 , wherein the second pad is disposed on an upper surface of the second pad metal layer, and an outer boundary of the second pad is disposed within an outer boundary of the second pad metal layer.