Method for forming barrier layer

Abstract

In accordance with an exemplary embodiment, a method for forming a barrier layer, which forms a barrier layer on a substrate by generating plasma, includes: injecting a NH3-containing gas to be adsorbed onto the substrate; primarily purging of injecting a purge gas toward the substrate after the injecting of the NH3-containing gas is stopped; generating plasma by using a H2 gas; injecting a Ti-containing gas toward the substrate to form a TiN thin-film on the substrate; and secondarily purging of injecting a purge gas toward the substrate after the injecting of the Ti-containing gas is stopped, and the method form one process cycle of sequentially performing the injecting of the NH3-containing gas, the primarily purging, the generating of the plasma, the injecting of the Ti-containing gas, and the secondarily purging. In accordance with exemplary embodiments, a barrier layer made of a TiN thin-film may be formed by an ALD method at a low temperature. Thus, the substrate or the thin-film formed on the substrate may be prevented from being damaged by high-temperature heat. Thus, a device including the barrier layer may be prevented from being defected or improved in performance. Also, impurities on the barrier layer may be removed by generating hydrogen plasma. Thus, degradation in quality of the device or the barrier layer caused by the impurities may be prevented.

1 . A method for forming a barrier layer, which forms a barrier layer on a substrate by generating plasma, comprising:
 injecting a NH 3 -containing gas to be adsorbed onto the substrate;   primarily purging of injecting a purge gas toward the substrate after the injecting of the NH 3 -containing gas is stopped;   generating plasma by using a H 2  gas;   injecting a Ti-containing gas toward the substrate to form a TiN thin-film on the substrate; and   secondarily purging of injecting a purge gas toward the substrate after the injecting of the Ti-containing gas is stopped,   wherein the method form one process cycle of sequentially performing the injecting of the NH 3 -containing gas, the primarily purging, the generating of the plasma, the injecting of the Ti-containing gas, and the secondarily purging.   
     
     
         2 . The method of  claim 1 , wherein the process cycle is repeatedly performed. 
     
     
         3 . A method for forming a barrier layer, comprising:
 injecting a Ti-containing gas to a process space in which a substrate is disposed;   depositing a TiN thin-film on the substrate by injecting a NH 3 -containing gas into the process space and generating plasma by using the NH 3 -containing gas; and   removing impurities on the TiN thin-film by injecting a H 2  gas into the process space and generating plasma by using the H 2  gas.   
     
     
         4 . The method of  claim 3 , wherein the generating of the plasma in each of the depositing of the TiN thin-film and the removing of the impurities comprises applying a RF power to an injection unit configured to inject the NH 3 -containing gas and the H 2 -containing gas into the process space,
 wherein the RF power is consecutively applied to the injection unit from the depositing of the TiN thin-film to the removing of the impurities.   
     
     
         5 . The method of  claim 4 , further comprising injecting a purge gas into the process space between the depositing of the TiN thin-film and the removing of the impurities. 
     
     
         6 . The method of  claim 5 , wherein plasma is generated using the purge gas by applying a RF power to the injection unit when the purge gas is injected. 
     
     
         7 . The method of  claim 3 , further comprising pre-processing that is performed before the injecting of the Ti-containing gas,
 wherein the pre-processing comprises:   injecting a NH 3 -containing gas into the process space so that the NH 3 -containing gas is adsorbed onto the substrate;   injecting a purge gas into the process space; and   generating plasma by using a H 2  gas.   
     
     
         8 . The method of  claim 3 , further comprising adjusting a temperature of each of the process space and a support configured to support the substrate in the process space to be equal to or greater than 300° C. and less than 350° C.