US2025364338A1PendingUtilityA1
Package structure and method for fabricating the same
Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Mar 31, 2022Filed: Aug 7, 2025Published: Nov 27, 2025
Est. expiryMar 31, 2042(~15.7 yrs left)· nominal 20-yr term from priority
H10W 74/121H10W 40/778H10W 72/072H10W 90/401H10W 70/611H10W 90/701H10W 40/257H10W 74/019H10W 74/01H10W 74/473B29C 45/14B29K 2401/00B29K 2105/162B29L 2031/3406B29K 2507/04H01L 23/4334H01L 23/3135H01L 21/56H01L 23/295
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Claims
Abstract
A package structure includes a die and a first encapsulant. The first encapsulant surrounds the die. The first encapsulant includes a first polymeric material and a first material network in the first polymeric material. The first material network comprises a first cellulose nanofibrils (CNFs) and a first 2D material, and the first 2D material has an in-plane thermal conductivity greater than a thermal conductivity of the first polymeric material.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A package structure, comprising:
a die; and a first encapsulant surrounding the die, wherein the first encapsulant comprises:
a first polymeric material; and
a first material network in the first polymeric material, wherein the first material network comprises a first cellulose nanofibrils (CNFs) and a first 2D material, and the first 2D material has an in-plane thermal conductivity greater than a thermal conductivity of the first polymeric material.
2 . The package structure of claim 1 , wherein the first 2D material has an out-of-plane thermal conductivity greater than the thermal conductivity of the first polymeric material.
3 . The package structure of claim 1 , wherein a dielectric constant of the first encapsulant is lower than silicon dioxide.
4 . The package structure of claim 1 , wherein the first 2D material comprises hexagonal boron nitride.
5 . The package structure of claim 1 , further comprising:
a second encapsulant surrounding the die and the first encapsulant, wherein the second encapsulant comprises a second polymeric material a second material network in the second polymeric material, and the second material network comprises a second CNFs and a second 2D material, the second 2D material has an in-plane thermal conductivity greater than a thermal conductivity of the second polymeric material.
6 . The package structure of claim 5 , wherein the second 2D material of the second encapsulant is different from the first 2D material of the first encapsulant.
7 . The package structure of claim 5 , wherein the second 2D material has a higher electrical conductivity than that of the first 2D material.
8 . The package structure of claim 5 , wherein the second 2D material comprises graphene.
9 . The package structure of claim 1 , further comprising:
a package substrate underlying the die; and an underfill between the package substrate and the die, wherein the underfill comprises a second polymeric material and a second material network in the second polymeric material, and the second material network comprises a second CNFs and a second 2D material.
10 . The package structure of claim 9 , wherein a premixing weight ratio of the second CNFs to the second 2D material of the underfill is different than a premixing weight ratio of the first CNFs to the first 2D material of the first encapsulant.
11 . A package structure, comprising:
a package substrate; a die disposed over the package substrate; a underfill disposed between the package substrate and the die, wherein the underfill comprises a first 1D nanomaterial and a first 2D material; and a first encapsulant disposed over the package substrate and laterally surrounding the die and the underfill, wherein the first encapsulant comprises a second 1D nanomaterial and a second 2D material that is different from the first 2D material of the underfill.
12 . The package structure of claim 11 , wherein the first 2D material of the underfill comprises hexagonal boron nitride, and the second 2D material of the first encapsulant comprises graphene.
13 . The package structure of claim 11 , wherein a dielectric constant of the first encapsulant is lower than silicon dioxide.
14 . The package structure of claim 11 , further comprising:
a second encapsulant disposed between the die and the first encapsulant and laterally surrounding the die, where the second encapsulant comprises a third 1D nanomaterial and a third 2D material.
15 . The package structure of claim 14 , wherein the third 2D material of the second encapsulant is different from the second 2D material of the first encapsulant.
16 . A package structure, comprising:
a package substrate; a die disposed over the package substrate; a underfill disposed between the package substrate and the die, wherein the underfill comprises a first 1D nanomaterial and a first 2D material; and a first encapsulant laterally surrounding the die, wherein the first encapsulant comprises a second 1D nanomaterial and a second 2D material, and a premixing weight ratio of the second 1D nanomaterial to the second 2D material of the first encapsulant is different from a premixing weight ratio of the first 1D nanomaterial to the first 2D material of the underfill.
17 . The package structure of claim 16 , wherein the first 1D nanomaterial comprises carbon nanotubes.
18 . The package structure of claim 16 , wherein a dielectric constant of the underfill is lower than silicon dioxide.
19 . The package structure of claim 16 , wherein the second 2D material of the first encapsulant is different from the first 1D nanomaterial of the underfill.
20 . The package structure of claim 16 . wherein the second 2D material of the first encapsulant is the same as the first 1D nanomaterial of the underfill.Join the waitlist — get patent alerts
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