Semiconductor device including dummy deep trench capacitors and a method of manufacturing thereof

Abstract

A semiconductor device and a method of manufacturing the semiconductor device are disclosed. In one aspect, at least one active deep trench capacitor (DTC), the at least one active DTC including a plurality of conductive layers and an insulating layer disposed between adjacent conductive layers of the plurality of conductive layers. The semiconductor device includes a plurality of dummy DTCs disposed on opposing sides of the at least one active DTC, the plurality of dummy DTCs and the at least one active DTC arranged in a row. The semiconductor device includes a plurality of conductive structures connected to the plurality of conductive layers of the active DTC, the plurality of dummy DTCs insulated from the at least one active DTC.

What is claimed is: 
     
         1 . A device, comprising:
 an interposer disposed with respect to a plurality of chips and configured to route signals and power supplies for the chips;   wherein the interposer comprises:
 a plurality of active deep trench capacitors (DTCs) including a plurality of conductive layers and an insulating layer disposed between adjacent ones of the plurality of conductive layers; and 
 a first dummy DTC disposed on a first side of the active DTCs and a second dummy DTC disposed on a second, opposite side of the active DTCs, the first and second dummy DTCs each electrically insulated from the active DTCs. 
   
     
     
         2 . The device of  claim 1 , wherein the interposer further comprises a plurality of conductive structures connected to the plurality of conductive layers of the active DTCs. 
     
     
         3 . The device of  claim 2 , wherein the conductive structures are each formed as a via. 
     
     
         4 . The device of  claim 1 , wherein at least one of the first or second dummy DTC includes a plurality of dummy DTC segments. 
     
     
         5 . The device of  claim 1 , wherein the active DTCs, the first dummy DTC, and the second dummy DTC have the same depth. 
     
     
         6 . The device of  claim 1 , wherein the active DTCs, the first dummy DTC, and the second dummy DTC have different depths. 
     
     
         7 . The device of  claim 6 , wherein at least one of the first or second dummy DTC has a depth that is about half the depth of the active DTCs. 
     
     
         8 . The device of  claim 6 , wherein at least one of the first or second dummy DTC has a depth that is less than half the depth of the active DTCs. 
     
     
         9 . The device of  claim 1 , wherein, when viewed from the top, the active DTCs, the first dummy DTC, and the second DTC all extend along a first lateral direction. 
     
     
         10 . The device of  claim 9 , wherein the first dummy DTC is disposed on the first side of the active DTCs along a second lateral direction perpendicular to the first lateral direction, and the second dummy DTC is disposed on the second side of the active DTCs along the second lateral direction. 
     
     
         11 . A device, comprising:
 an interposer comprising:
 an undoped silicon glass; 
 a plurality of active deep trench capacitors (DTCs), each of the active DTCs including a plurality of conductive layers and an insulating layer disposed between adjacent ones of the plurality of conductive layers; and 
 a first dummy DTC disposed on a first side of the active DTCs along a first lateral direction and a second dummy DTC disposed on a second, opposite side of the active DTCs along the first lateral direction, the first and second dummy DTCs each electrically insulated from the active DTCs with at least the undoped silicon glass. 
   
     
     
         12 . The device of  claim 11 , wherein each of the conductive layers includes a portion disposed below the undoped silicon glass and another portion disposed above the undoped silicon glass. 
     
     
         13 . The device of  claim 12 , wherein the first dummy DTC and the second dummy DTC are disposed below the undoped silicon glass. 
     
     
         14 . The device of  claim 11 , wherein the interposer further comprises a plurality of conductive structures connected to the plurality of conductive layers of each of the active DTCs. 
     
     
         15 . The device of  claim 14 , wherein the conductive structures are each formed as a via. 
     
     
         16 . The device of  claim 11 , wherein the active DTCs, the first dummy DTC, and the second dummy DTC have the same depth. 
     
     
         17 . The device of  claim 11 , wherein the active DTCs, the first dummy DTC, and the second dummy DTC have different depths. 
     
     
         18 . The device of  claim 11 , wherein, when viewed from the top, the active DTCs, the first dummy DTC, and the second DTC all extend along a second lateral direction perpendicular to the first lateral direction. 
     
     
         19 . A device, comprising:
 an interposer comprising:
 an undoped silicon glass; 
 an active deep trench capacitor (DTC) including a plurality of conductive layers and an insulating layer disposed between adjacent ones of the plurality of conductive layers; and 
 a first dummy DTC disposed on a first side of the active DTC along a lateral direction and a second dummy DTC disposed on a second, opposite side of the active DTC along the lateral direction, the first and second dummy DTCs each electrically insulated from the active DTC with at least the undoped silicon glass. 
   
     
     
         20 . The device of  claim 19 , wherein the interposer further comprises a plurality of vias connected to the plurality of conductive layers, respectively.