Polishing apparatus

Abstract

A polishing apparatus is provided. The polishing apparatus includes a platen. The polishing apparatus includes a polishing pad coupled to the platen and configured to be rotated by the platen. The polishing apparatus includes a first pad conditioner in contact with a polishing surface of the polishing pad. The polishing apparatus includes a second pad conditioner in contact with the polishing surface.

What is claimed is: 
     
         1 . A polishing apparatus, comprising:
 a platen;   a polishing pad coupled to the platen and configured to be rotated by the platen;   a first pad conditioner in contact with a polishing surface of the polishing pad; and   a second pad conditioner in contact with the polishing surface.   
     
     
         2 . The polishing apparatus of  claim 1 , wherein:
 the first pad conditioner comprises:
 a first pad conditioner head in contact with the polishing surface; and 
 a first pad conditioner arm configured to oscillate the first pad conditioner head along a first oscillation path between a first position relative to the polishing surface and a second position relative to the polishing surface; 
   the second pad conditioner comprises:
 a second pad conditioner head in contact with the polishing surface; and 
 a second pad conditioner arm configured to oscillate the second pad conditioner head along a second oscillation path between a third position relative to the polishing surface and a fourth position relative to the polishing surface; and 
   the first oscillation path is different than the second oscillation path.   
     
     
         3 . The polishing apparatus of  claim 2 , wherein:
 a distance between an edge of the polishing surface and a fifth position of the first pad conditioner head along the first oscillation path is at most about 200 millimeters; and   the fifth position of the first pad conditioner head is a closest position along the first oscillation path to the edge of the polishing surface.   
     
     
         4 . The polishing apparatus of  claim 1 , wherein:
 the first pad conditioner comprises a first pad conditioner head in contact with a first portion the polishing surface; and   the first portion of the polishing surface at least one of:
 comprises at least a portion of an edge of the polishing surface; or 
 is separated from the edge by at most about 200 millimeters. 
   
     
     
         5 . The polishing apparatus of  claim 4 , wherein:
 the second pad conditioner comprises a second pad conditioner head in contact with a second portion of the polishing surface; and   the first portion of the polishing surface is different than the second portion of the polishing surface.   
     
     
         6 . The polishing apparatus of  claim 4 , wherein:
 the first pad conditioner head comprises a diamond disk.   
     
     
         7 . The polishing apparatus of  claim 4 , wherein:
 the first pad conditioner head comprises at least one of a brush, a hydrophilic pad, a hydrophobic pad, or a polyvinyl alcohol (PVA) sponge.   
     
     
         8 . The polishing apparatus of  claim 7 , wherein:
 the second pad conditioner comprises a second pad conditioner head in contact with a second portion of the polishing surface; and   the second pad conditioner head comprises a diamond disk.   
     
     
         9 . The polishing apparatus of  claim 1 , comprising:
 a wafer holder configured to support a semiconductor wafer in a polishing position relative to the polishing surface of the polishing pad for polishing of the semiconductor wafer.   
     
     
         10 . The polishing apparatus of  claim 1 , comprising:
 a slurry provider configured to provide a slurry to the polishing surface.   
     
     
         11 . A method of operating a polishing apparatus comprising a platen and a polishing pad coupled to the platen, the method comprising:
 conditioning, using a first pad conditioner of the polishing apparatus, a first portion of a polishing surface of the polishing pad; and   conditioning, using a second pad conditioner of the polishing apparatus, a second portion of the polishing surface, wherein the second portion is different than the first portion.   
     
     
         12 . The method of  claim 11 , wherein the first portion of the polishing surface at least one of:
 comprises at least a portion of an edge of the polishing surface; or   is separated from the edge by at most about 200 millimeters.   
     
     
         13 . The method of  claim 11 , wherein:
 conditioning the first portion using the first pad conditioner and conditioning the second portion using the second pad conditioner are performed concurrently.   
     
     
         14 . The method of  claim 11 , comprising:
 using the polishing pad to polish a semiconductor wafer.   
     
     
         15 . The method of  claim 14 , comprising:
 providing, using a slurry provider of the polishing apparatus, a slurry to the polishing surface while using the polishing pad to polish the semiconductor wafer.   
     
     
         16 . The method of  claim 11 , wherein at least one of:
 conditioning the first portion using the first pad conditioner comprises oscillating a first pad conditioner head of the first pad conditioner along a first oscillation path between a first position relative to the polishing surface and a second position relative to the polishing surface; and   conditioning the second portion using the second pad conditioner comprises oscillating a second pad conditioner head of the second pad conditioner along a second oscillation path between a third position relative to the polishing surface and a fourth position relative to the polishing surface.   
     
     
         17 . The method of  claim 11 , comprising:
 after conditioning the first portion of the polishing surface using the first pad conditioner, replacing a first pad conditioner head of the first pad conditioner with a second pad conditioner head, wherein the first pad conditioner head is of a first conditioner head type and the second pad conditioner head is of a second conditioner head type and the first conditioner head type is different than the second conditioner head type; and   conditioning the first portion of the polishing surface using the first pad conditioner with the second pad conditioner head.   
     
     
         18 . A polishing apparatus, comprising:
 a platen;   a polishing pad coupled to the platen and configured to be rotated by the platen;   a wafer holder configured to support a semiconductor wafer in a polishing position relative to the polishing pad for polishing of the semiconductor wafer;   a slurry provider configured to provide a slurry to a polishing surface of the polishing pad for polishing of the semiconductor wafer;   a first pad conditioner configured to condition a first portion of the polishing surface; and   a second pad conditioner configured to condition a second portion of the polishing surface, wherein the second portion is different than the first portion.   
     
     
         19 . The polishing apparatus of  claim 18 , wherein the first portion of the polishing surface at least one of:
 comprises at least a portion of an edge of the polishing surface; or   is separated from the edge by at most about 200 millimeters.   
     
     
         20 . The polishing apparatus of  claim 19 , comprising:
 a third pad conditioner configured to condition a third portion of the polishing surface, wherein the third portion of the polishing surface at least one of:
 comprises at least a second portion of the edge of the polishing surface; or 
 is separated from the edge by at most about 200 millimeters.