Semiconductor Device and Method for Forming the Same

Abstract

A method includes forming a first capacitor electrode; forming a first oxygen-blocking layer on the first capacitor electrode; forming an capacitor insulator layer on the first oxygen-blocking layer; forming a second oxygen-blocking layer on the capacitor insulator layer; forming a second capacitor electrode on the second oxygen-blocking layer; and forming a first contact plug that is electrically coupled to the first capacitor electrode and a second contact plug that is electrically coupled to the second capacitor electrode.

1 - 20 . (canceled) 
     
     
         21 . A device comprising:
 a first contact plug over a substrate;   a second contact plug over the substrate;   first dielectric layer extending from a first sidewall of the first contact plug to a second sidewall of the second contact plug;   a first conductive layer extending on the first electric layer, wherein the first conductive layer contacts the first sidewall;   a first layer of a first metal oxide extending on the first conductive layer and on the first dielectric layer, wherein the first layer of the first metal oxide extends from the first sidewall to the second sidewall;   a first layer of a second metal oxide extending on the first layer of the first metal oxide, wherein the first layer of the second metal oxide extends from the first sidewall to the second sidewall;   a second layer of the first metal oxide extending on the first layer of the second metal oxide, wherein the second layer of the first metal oxide extends from the first sidewall to the second sidewall;   a second conductive layer extending on the second layer of the first metal oxide, wherein the second conductive layer contacts the second sidewall;   a third layer of the first metal oxide extending on the second conductive layer and on the second layer of the first metal oxide, wherein the third layer of the first metal oxide extends from the first sidewall to the second sidewall;   a second layer of the second metal oxide extending on the third layer of the first metal oxide, wherein the second layer of the second metal oxide extends from the first sidewall to the second sidewall;   a fourth layer of the first metal oxide extending on the second layer of the second metal oxide, wherein the fourth layer of the first metal oxide extends from the first sidewall to the second sidewall; and   a third conductive layer extending on the fourth layer of the first metal oxide, wherein the third conductive layer contacts the first sidewall.   
     
     
         22 . The device of  claim 21 , wherein the first layer of the first metal oxide and the second layer of the first metal oxide have different thicknesses. 
     
     
         23 . The device of  claim 21 , wherein the first metal oxide is a titanium oxide. 
     
     
         24 . The device of  claim 21 , wherein the second metal oxide is free of titanium. 
     
     
         25 . The device of  claim 21 , wherein the first sidewall faces the second sidewall. 
     
     
         26 . The device of  claim 21 , wherein the first contact plug and the second contact plug extend through the first dielectric layer. 
     
     
         27 . The device of  claim 21 , wherein the first layer of the second metal oxide has a thickness in the range of 30 Å to 100 Å. 
     
     
         28 . The device of  claim 21 , wherein the first layer of the second metal oxide is free of the second layer of the second metal oxide. 
     
     
         29 . A device comprising:
 a first electrode layer over a substrate;   a first barrier layer covering a top surface and a sidewall of the first electrode layer;   a first insulator layer covering a top surface and a sidewall of the first barrier layer;   a second barrier layer covering a top surface and a sidewall of the first insulator layer; and   a second electrode layer covering a top surface and a sidewall of the second barrier layer, wherein the first insulator layer is free of the first electrode layer and the second electrode layer, wherein a bottom surface of the second electrode layer is closer to the substrate than a top surface of the first electrode layer.   
     
     
         30 . The device of  claim 29 , wherein the second barrier layer has a thickness in the range of 5 Å to 30 Å. 
     
     
         31 . The device of  claim 29 , wherein the first barrier layer and the second barrier layer are different materials. 
     
     
         32 . The device of  claim 29 , wherein the second barrier layer is a layer of zirconium oxide. 
     
     
         33 . The device of  claim 29 , wherein the first barrier layer is a layer of titanium oxynitride. 
     
     
         34 . The device of  claim 29 , wherein bottom surfaces of the first insulator layer and the first electrode layer are level. 
     
     
         35 . A method comprising:
 conformally depositing a first electrode on a first dielectric layer;   conformally depositing a first oxygen-blocking layer over the first electrode using a first deposition process;   conformally depositing a first high-k layer over the first oxygen-blocking layer;   conformally depositing a second oxygen-blocking layer over the first high-k layer using an atomic layer deposition (ALD) process;   conformally depositing a second electrode on the second oxygen-blocking layer;   forming a first contact plug that penetrates the first electrode, the first oxygen-blocking layer, the first high-k layer, and the second oxygen-blocking layer; and   forming a second contact plug that penetrates the first oxygen-blocking layer, the first high-k layer, the second oxygen-blocking layer, and the second electrode.   
     
     
         36 . The method of  claim 35 , wherein the first deposition process comprises a thermal oxidation process. 
     
     
         37 . The method of  claim 35 , wherein the first deposition process comprises an ALD process. 
     
     
         38 . The method of  claim 35 , wherein the second electrode is deposited after the second oxygen-blocking layer is deposited. 
     
     
         39 . The method of  claim 35 , wherein the first oxygen-blocking layer has a larger concentration of nitrogen than the second oxygen-blocking layer. 
     
     
         40 . The method of  claim 35  further comprising conformally depositing a third oxygen-blocking layer on the second electrode and on the second oxygen-blocking layer using a second deposition process.