Semiconductor device and method of manufacture

Abstract

A device includes a redistribution structure, a first semiconductor device, a first antenna, and a first conductive pillar on the redistribution structure that are electrically connected to the redistribution structure, an antenna structure over the first semiconductor device, wherein the antenna structure includes a second antenna that is different from the first antenna, wherein the antenna structure includes an external connection bonded to the first conductive pillar, and a molding material extending between the antenna structure and the redistribution structure, the molding material surrounding the first semiconductor device, the first antenna, the external connection, and the first conductive pillar.

1 . (canceled) 
     
     
         2 . A method of forming a semiconductor device, the method comprising:
 forming a redistribution structure;   attaching a first semiconductor device to the redistribution structure; and   attaching an antenna structure to the redistribution structure, wherein the first semiconductor device is between the redistribution structure and the antenna structure, the antenna structure comprising:
 an insulating layer; 
 a plurality of antennas; 
 thermal vias extending through the insulating layer; and 
 a first conductive layer on a bottom surface of the insulating layer, the first conductive layer coupled to the thermal vias. 
   
     
     
         3 . The method of  claim 2 , further comprising:
 forming dipole antennas on the redistribution structure.   
     
     
         4 . The method of  claim 2 , further comprising:
 forming lower sidewall antenna structures on the redistribution structure.   
     
     
         5 . The method of  claim 4 , wherein the antenna structure includes upper sidewall antenna structures, wherein the lower sidewall antenna structures are electrically coupled to respective ones of the upper sidewall antenna structures. 
     
     
         6 . The method of  claim 2 , wherein the plurality of antennas comprises patch antennas formed on a top surface of the insulating layer. 
     
     
         7 . The method of  claim 6 , wherein the patch antennas are configured to operate having a directionality that is normal to the top surface of the insulating layer. 
     
     
         8 . The method of  claim 2 , wherein the plurality of antennas comprises end-fire antennas formed on a top surface of the insulating layer. 
     
     
         9 . The method of  claim 8 , wherein the end-fire antennas are configured to operate having a directionality that is parallel to the top surface of the insulating layer. 
     
     
         10 . A method of forming a semiconductor device, the method comprising:
 forming a redistribution structure;   forming a first conductive pillar on the redistribution structure;   attaching a first semiconductor device to the redistribution structure;   forming a first encapsulant over the redistribution structure and along sidewalls of the first semiconductor device; and   attaching an antenna structure to the first conductive pillar, the antenna structure comprising an antenna substrate and a first antenna on an upper surface of the antenna substrate.   
     
     
         11 . The method of  claim 10 , wherein the first encapsulant covers an upper surface of the first semiconductor device. 
     
     
         12 . The method of  claim 10 , wherein the antenna structure includes thermal vias positioned over the first semiconductor device. 
     
     
         13 . The method of  claim 12 , further comprising:
 forming dipole antennas on the redistribution structure.   
     
     
         14 . The method of  claim 10 , wherein the first antenna comprises an end-fire antenna formed on the upper surface of the antenna substrate. 
     
     
         15 . The method of  claim 14 , wherein the end-fire antenna is configured to operate having a directionality that is parallel to the upper surface of the antenna substrate. 
     
     
         16 . The method of  claim 10 , further comprising:
 forming lower sidewall antenna structures on the redistribution structure, wherein the first antenna includes upper sidewall antenna structures extending through the antenna substrate; and   electrically coupling the lower sidewall antenna structures to corresponding ones of the upper sidewall antenna structures.   
     
     
         17 . A method of forming a semiconductor device, the method comprising:
 forming a redistribution structure;   forming a first conductive pillar on the redistribution structure;   forming a lower sidewall antenna structure on the redistribution structure;   attaching a first semiconductor device to the redistribution structure;   forming a molding material between the first conductive pillar, the lower sidewall antenna structure and the first semiconductor device; and   attaching an antenna structure over the first semiconductor device, wherein the antenna structure comprises:
 an antenna substrate; and 
 an upper sidewall antenna structure extending through the antenna substrate, the upper sidewall antenna structure being electrically coupled to the lower sidewall antenna structure to form a sidewall antenna. 
   
     
     
         18 . The method of  claim 17 , wherein the antenna structure includes patch antennas. 
     
     
         19 . The method of  claim 17 , wherein the lower sidewall antenna structure comprises lower sidewall vias positioned around the first semiconductor device. 
     
     
         20 . The method of  claim 17 , wherein the antenna structure includes end-fire antennas on an upper surface of the antenna substrate. 
     
     
         21 . The method of  claim 17 , wherein the upper sidewall antenna structure comprises a via opening through the antenna substrate, a conductive lining along sidewalls of the via opening, and a dielectric fill.