Diffusing agent composition, and method for manufacturing semiconductor substrate

Abstract

A diffusing agent composition capable of preventing generation of foreign matter in a coating film to be formed, and a method for manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition includes an impurity diffusing component; and a solvent, in which a content of the impurity diffusing component is more than 0% by mass and 1.0% by mass or less, the solvent (S) includes a first solvent and a second solvent different from the first solvent, a boiling point of the first solvent under atmospheric pressure is 180° C. or higher, a hydrogen bonding force term δH of a Hansen solubility parameter of the first solvent is 14.0 or more, and a content of the first solvent is more than 0.10% by mass with respect to a mass of the solvent.

1 . A diffusing agent composition for use in diffusing an impurity into a semiconductor substrate, the diffusing agent composition comprising:
 an impurity diffusing component (A); and a solvent (S),   wherein a content of the impurity diffusing component (A) is more than 0% by mass and 1.0% by mass or less,   wherein the solvent (S) comprises a solvent (S1) and a solvent (S2) which is different from the solvent (S1),   a boiling point of the solvent (S1) under atmospheric pressure is 180° C. or higher,   a hydrogen bonding force term δH of a Hansen solubility parameter of the solvent (S1) is 14.0 or more, and   a content of the solvent (S1) is more than 0.10% by mass with respect to a mass of the solvent (S).   
     
     
         2 . The diffusing agent composition according to  claim 1 , wherein the impurity diffusing component (A) is 60% by mass or more with respect to a total solid content in the diffusing agent composition. 
     
     
         3 . The diffusing agent composition according to  claim 1 , wherein the content of the solvent (S1) is less than 30% by mass with respect to the mass of the solvent (S). 
     
     
         4 . The diffusing agent composition according to  claim 1 , wherein the solvent (S1) is a glycol-based solvent. 
     
     
         5 . The diffusing agent composition according to  claim 1 , wherein the impurity diffusing component (A) comprises a compound having the hydrogen bonding force term δH of the Hansen solubility parameter of 60.0 or more. 
     
     
         6 . The diffusing agent composition according to  claim 1 , further comprising an amine compound (B). 
     
     
         7 . A method for manufacturing a semiconductor substrate, the method comprising: forming a coating film by applying the diffusing agent composition according to  claim 1  on the semiconductor substrate; and
 diffusing the impurity diffusing component (A) in the diffusing agent composition into the semiconductor substrate. 
 
     
     
         8 . The method for manufacturing a semiconductor substrate according to  claim 7 , wherein the coating film is heated to diffuse the impurity diffusing component (A) into the semiconductor substrate.